Variations in the apparent optical band-gap of RPE-CVD grown indium nitride thin films

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dc.contributor.authorButcher, KSAen_AU
dc.contributor.authorWintrebert-Fouquet, Men_AU
dc.contributor.authorChen, PPTen_AU
dc.contributor.authorTansley, TLen_AU
dc.contributor.authorPrince, KEen_AU
dc.date.accessioned2021-09-06T06:43:42Zen_AU
dc.date.available2021-09-06T06:43:42Zen_AU
dc.date.issued2004-02-05en_AU
dc.date.statistics2021-08-24en_AU
dc.description.abstractIndium nitride is a semiconducting material with a band-gap which is in current dispute. Although a ~ 0.75 eV band-gap was announced by some international groups in 2002 [1,2], it has since been shown that all the evidence for a ~ 0.75 eV band-gap is due to deep level defects [3, 4]. Despite this there still appears to be anomolous variations in the apparent bandgap for this material. The Macquarie University Low Temperature Nitride Film Growth Facility has recently grown some very high quality indium nitride thin films by remote plasma enhanced chemical vapour deposition (RPE-CVD). This material shows a variation in the apparent band-gap, as measured by optical absorption techniques, of 1.2 eV to 1.8 eV, dependent on the growth temperature and time. SIMS results measured by the ANSTO SIMS group show that the oxygen content of the films is low and that the variation in the apparent band-gap is not correlated to oxygen content. Other film properties will be described.en_AU
dc.identifier.citationButcher, K. S. A., Wintrebert-Fouquet, M., Chen, P. P.-T., Tansley, T. L., & Prince, K. E. (2004). Variations in the apparent optical band-gap of RPE-CVD grown indium nitride thin films. Poster presented to the 28th Annual Condensed Matter and Materials Meeting, Charles Sturt University, Wagga Wagga, 3-6 February 2004. Retrieved from: https://www.physics.org.au/wp-content/uploads/cmm/2004/04handbook.pdfen_AU
dc.identifier.conferenceenddate6 February 2004en_AU
dc.identifier.conferencename28th Annual Condensed Matter and Materials Meetingen_AU
dc.identifier.conferenceplaceWagga Wagga, New South Walesen_AU
dc.identifier.conferencestartdate3 February 2004en_AU
dc.identifier.issn1037-1214en_AU
dc.identifier.otherTP16en_AU
dc.identifier.urihttps://www.physics.org.au/wp-content/uploads/cmm/2004/04handbook.pdfen_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/11606en_AU
dc.language.isoenen_AU
dc.publisherAustralian Institute of Physicsen_AU
dc.subjectIndium nitridesen_AU
dc.subjectThin filmsen_AU
dc.subjectSemiconductor materialsen_AU
dc.subjectBand theoryen_AU
dc.subjectDefectsen_AU
dc.subjectChemical vapor depositionen_AU
dc.subjectANSTOen_AU
dc.subjectAustraliaen_AU
dc.titleVariations in the apparent optical band-gap of RPE-CVD grown indium nitride thin filmsen_AU
dc.typeConference Posteren_AU
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