Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/10177
Title: Boron enhanced H diffusion in amorphous Si formed by in implantation
Authors: Johnson, BC
Atanacio, AJ
Prince, KE
McCallum, JC
Keywords: Boron
Diffusion
Fermi level
Ions
Ion implantation
Mass spectroscopy
Issue Date: 25-Mar-2008
Publisher: Cambridge University Press
Citation: Johnson, B. C., Atanacio, A. J., Prince, K. E., & McCallum, J. C. (2008). Boron enhanced H diffusion in amorphous Si formed by in implantation. In: Pawlak, B. J., Pelaz, M. L., Law. M., & Suguro. K. (eds), Materials Research Society, Symposium Proceedings, Volume 1070: Symposium E - Doping Engineering for Front-End Processing, 25-27 March, San Francisco California (pp. 211-216) (MRS Online Proceedings Library Archive, 1070). doi:10.1557/PROC-1070-E05-05
Series/Report no.: MRS Symposium Proceedings;Volume 1070
Abstract: Boron enhanced H diffusion in amorphous Si (a-Si) layers formed by ion implantation is observed using secondary ion mass spectroscopy (SIMS). Constant concentrations of B were achieved using multiple energy B implantations into thick a-Si layers. The evolution of single H implanted profiles centered on the uniformly B-implanted regions was studied for partial anneals at temperatures in the range 380 – 640 °C. Boron enhanced diffusion is observed and the enhanced diffusion coefficient shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is considered in light of these results. © Materials Research Society 2008
URI: https://doi.org/10.1557/PROC-1070-E05-05
https://apo.ansto.gov.au/dspace/handle/10238/10177
ISBN: 9781107408548
ISSN: 1946-4274
Appears in Collections:Conference Publications

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