Boron enhanced H diffusion in amorphous Si formed by in implantation
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Cambridge University Press
Abstract
Boron enhanced H diffusion in amorphous Si (a-Si) layers formed by ion implantation is observed using secondary ion mass spectroscopy (SIMS). Constant concentrations of B were achieved using multiple energy B implantations into thick a-Si layers. The evolution of single H implanted profiles centered on the uniformly B-implanted regions was studied for partial anneals at temperatures in the range 380 – 640 °C. Boron enhanced diffusion is observed and the enhanced diffusion coefficient shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is considered in light of these results. © Materials Research Society 2008
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Johnson, B. C., Atanacio, A. J., Prince, K. E., & McCallum, J. C. (2008). Boron enhanced H diffusion in amorphous Si formed by in implantation. Paper presented to the Symposium E - Doping Engineering for Front-End Processing, 25-27 March, San Francisco California. In: Pawlak, B. J., Pelaz, M. L., Law. M., & Suguro. K. (eds), Materials Research Society, Symposium Proceedings, Symposium E - Doping Engineering for Front-End Processing, 25-27 March, San Francisco California, 1070, 211-216. doi:10.1557/PROC-1070-E05-05