Boron enhanced H diffusion in amorphous Si formed by in implantation

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dc.contributor.authorJohnson, BCen_AU
dc.contributor.authorAtanacio, AJen_AU
dc.contributor.authorPrince, KEen_AU
dc.contributor.authorMcCallum, JCen_AU
dc.date.accessioned2021-01-05T22:13:54Zen_AU
dc.date.available2021-01-05T22:13:54Zen_AU
dc.date.issued2008-03-25en_AU
dc.date.statistics2020-12-23en_AU
dc.description.abstractBoron enhanced H diffusion in amorphous Si (a-Si) layers formed by ion implantation is observed using secondary ion mass spectroscopy (SIMS). Constant concentrations of B were achieved using multiple energy B implantations into thick a-Si layers. The evolution of single H implanted profiles centered on the uniformly B-implanted regions was studied for partial anneals at temperatures in the range 380 – 640 °C. Boron enhanced diffusion is observed and the enhanced diffusion coefficient shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is considered in light of these results. © Materials Research Society 2008en_AU
dc.identifier.booktitleMRS Online Proceedings Libraryen_AU
dc.identifier.citationJohnson, B. C., Atanacio, A. J., Prince, K. E., & McCallum, J. C. (2008). Boron enhanced H diffusion in amorphous Si formed by in implantation. Paper presented to the Symposium E - Doping Engineering for Front-End Processing, 25-27 March, San Francisco California. In: Pawlak, B. J., Pelaz, M. L., Law. M., & Suguro. K. (eds), Materials Research Society, Symposium Proceedings, Symposium E - Doping Engineering for Front-End Processing, 25-27 March, San Francisco California, 1070, 211-216. doi:10.1557/PROC-1070-E05-05en_AU
dc.identifier.conferenceenddate27 March 2008en_AU
dc.identifier.conferencenameSymposium E - Doping Engineering for Front-End Processingen_AU
dc.identifier.conferenceplaceSan Fransisco, Californiaen_AU
dc.identifier.conferencestartdate25 March 2008en_AU
dc.identifier.editorsPawlak, B. J., Pelaz, M. L., Law. M., & Suguro. K.en_AU
dc.identifier.isbn9781107408548en_AU
dc.identifier.issn1946-4274en_AU
dc.identifier.pagination211-216en_AU
dc.identifier.urihttps://doi.org/10.1557/PROC-1070-E05-05en_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/10177en_AU
dc.identifier.volume1070en_AU
dc.language.isoenen_AU
dc.publisherCambridge University Pressen_AU
dc.relation.ispartofseriesMRS Symposium Proceedings;Volume 1070en_AU
dc.subjectBoronen_AU
dc.subjectDiffusionen_AU
dc.subjectFermi levelen_AU
dc.subjectIonsen_AU
dc.subjectIon implantationen_AU
dc.subjectMass spectroscopyen_AU
dc.titleBoron enhanced H diffusion in amorphous Si formed by in implantationen_AU
dc.typeConference Paperen_AU
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