Please use this identifier to cite or link to this item:
Title: Chemically induced electric field: flat band potential engineering
Authors: Bak, T
Guo, Z
Li, W
Atanacio, AJ
Nowotny, J
Keywords: Interfaces
Solar energy
N-type conductors
Issue Date: 5-Oct-2012
Publisher: SPIE
Citation: Bak, T., Guo, Z., Li, W., Atanacio, A. J., & Nowotny, J. (2012). Chemically induced electric field: flat band potential engineering. In: Vayssieres, L. (ed), SPIE Solar Energy & Technology: Solar Hydrogen and Nanotechnology VII, 12-16 August, 2012, San Diego, California. (Vol. 8469, p. 84690Q). Society of Photo-Optical Instrumentation Engineers (SPIE). doi:10.1117/12.927749
Abstract: The present work considers engineering of the flat band potential, FBP, of metal oxides in a controlled manner. The aim is to minimise the energy losses related to recombination. The related experimental approaches include imposition of a chemically-induced electric field using the phenomena of segregation, diffusion and the formation of multilayer systems. This paper considers several basic phenomena that allow the modification of the surface charge and the space charge at the gas/solid and solid/liquid interfaces. © (2012) Society of Photo-Optical Instrumentation Engineers (SPIE).
ISBN: 9780819491886
Appears in Collections:Conference Publications

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.