Chemically induced electric field: flat band potential engineering
dc.contributor.author | Bak, T | en_AU |
dc.contributor.author | Guo, Z | en_AU |
dc.contributor.author | Li, W | en_AU |
dc.contributor.author | Atanacio, AJ | en_AU |
dc.contributor.author | Nowotny, J | en_AU |
dc.date.accessioned | 2020-12-20T19:04:09Z | en_AU |
dc.date.available | 2020-12-20T19:04:09Z | en_AU |
dc.date.issued | 2012-10-05 | en_AU |
dc.date.statistics | 2020-12-18 | en_AU |
dc.description.abstract | The present work considers engineering of the flat band potential, FBP, of metal oxides in a controlled manner. The aim is to minimise the energy losses related to recombination. The related experimental approaches include imposition of a chemically-induced electric field using the phenomena of segregation, diffusion and the formation of multilayer systems. This paper considers several basic phenomena that allow the modification of the surface charge and the space charge at the gas/solid and solid/liquid interfaces. © (2012) Society of Photo-Optical Instrumentation Engineers (SPIE). | en_AU |
dc.identifier.booktitle | SPIE Solar Energy & Technology: Solar Hydrogen and Nanotechnology VII | en_AU |
dc.identifier.citation | Bak, T., Guo, Z., Li, W., Atanacio, A. J., & Nowotny, J. (2012). Chemically induced electric field: flat band potential engineering. In: Vayssieres, L. (ed), SPIE Solar Energy & Technology: Solar Hydrogen and Nanotechnology VII, 12-16 August, 2012, San Diego, California. (Vol. 8469, pp. 84690Q). Society of Photo-Optical Instrumentation Engineers (SPIE). doi:10.1117/12.927749 | en_AU |
dc.identifier.conferenceenddate | 16 August 2012 | en_AU |
dc.identifier.conferencename | SPIE Optics and Photonics 2012 | en_AU |
dc.identifier.conferenceplace | San Diego, California | en_AU |
dc.identifier.conferencestartdate | 12 August 2012 | en_AU |
dc.identifier.editors | Vayssieres, L. | en_AU |
dc.identifier.isbn | 9780819491886 | en_AU |
dc.identifier.issue | 5 | en_AU |
dc.identifier.pagination | 84690Q | en_AU |
dc.identifier.uri | https://doi.org/10.1117/12.927749 | en_AU |
dc.identifier.uri | https://apo.ansto.gov.au/dspace/handle/10238/10130 | en_AU |
dc.identifier.volume | 8469 | en_AU |
dc.language.iso | en | en_AU |
dc.publisher | SPIE | en_AU |
dc.subject | Interfaces | en_AU |
dc.subject | Diffusion | en_AU |
dc.subject | Oxides | en_AU |
dc.subject | Oxygen | en_AU |
dc.subject | Solar energy | en_AU |
dc.subject | N-type conductors | en_AU |
dc.subject | Electrons | en_AU |
dc.subject | Ionization | en_AU |
dc.subject | Metals | en_AU |
dc.title | Chemically induced electric field: flat band potential engineering | en_AU |
dc.type | Conference Paper | en_AU |
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