Charge transport properties of CdMnTe radiation detectors
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Date
2012-04-11
Journal Title
Journal ISSN
Volume Title
Publisher
EDP Sciences
Abstract
Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55) cm2/Vs at room temperature. © 2012 the Authors, published by EDP Sciences.
Description
Keywords
Radiation detectors, Cadmium compounds, Cadmium, Manganese, Tellurides, Electric fields, Charge transport, Fabrication
Citation
Rafiei, R., Boardman, D., Reinhard, M. I., Sarbutt, A., Kim, K., Watt, G. C., Uxa, S., Prokopovich, D. A., Belas, E., Bolotnikov, A. E., & James, R. B. (2012). Charge transport properties of CdMnTe radiation detectors. Paper presented at the Heavy Ion Accelerator Symposium on Fundamental and Applied Science 2012, Department of Physics, Australian National University, Canberra, ACT, 11-13 April 2012. In EPJ Web of Conferences, 35, 02005. doi:10.1051/epjconf/20123502005