Using polarized neutron reflectometry to resolve effects of light elements and ion exposure on magnetization
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Date
2020
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Elsevier
Abstract
This chapter introduces the polarized neutron reflectometry (PNR) technique with a focus on its unique applications to studying the effects of light elements and ion beams in magnetic thin films. The chapter is divided into six sections. Following a brief introduction in Section 1, Section 2 introduces the operational principles and advantages of PNR. Section 3 discusses recent experiments on magnetic hydrogen sensors using in-situ magnetic measurements made on a PNR beam line. Section 4 reviews recent progress using PNR to clarify how low-energy ion beams can modulate the magnetic properties by implantation, modifying oxygen stoichiometry, interface engineering with argon, and imprinting magnetic domains by driving phase transitions. Section 5 exemplifies how PNR can be used to study lateral magnetic domain structures patterned using helium ion beams. Section 6 presents conclusions and future perspectives in form of a brief roadmap highlighting some of the latest developments in PNR, and the new technical possibilities that are anticipated over the coming decade. © 2020 Elsevier Inc.
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Keywords
Neutron reflectors, Light Sources, Ions, Magnetization, Ion beams, Helium ions, Oxygen, Thin Films, Stoichiometry
Citation
Callori, S. J., Saerbeck, T., Cortie, D. L., & Lin, K.-W. (2020). Chapter Three - Using polarized neutron reflectometry to resolve effects of light elements and ion exposure on magnetization. In R. L. Stamps (Ed.), Solid State Physics (Vol. 71, pp. 73-116). Academic Press. doi:10.1016/bs.ssp.2020.09.002