Effect of annealing upon retention of He and H in irradiated SiC

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dc.contributor.authorIonescu, Men_AU
dc.contributor.authorDeslandes, Aen_AU
dc.contributor.authorHolmes, Ren_AU
dc.contributor.authorGuenette, MCen_AU
dc.contributor.authorKaratchevtseva, Ien_AU
dc.contributor.authorLumpkin, GRen_AU
dc.date.accessioned2025-01-13T22:48:25Zen_AU
dc.date.available2025-01-13T22:48:25Zen_AU
dc.date.issued2017en_AU
dc.date.statistics2025-01-14en_AU
dc.description.abstractSilicon carbide (3C-β SiC) samples were irradiated with He ions of energy up to 30 keV and a fluence up to 1016/cm2, to produce damage in the near-surface region. A duplicate set of He ion irradiated SiC samples, as well as undamaged SiC, were also irradiated with H2+ ions of energy up to 20 keV and a similar fluence, to study the interaction of H species with pristine SiC and with He radiation-damaged SiC. Samples were annealed in steps of 200 K, from 473 K to 1273 K, and the retention of H and He were measured using elastic recoil detection analysis with 7.8 MeV C3+ ions, after each anneal step. Modification to the surface following irradiation is observed via Raman spectroscopy, which exhibits development of damage states such as disordered carbon and Si-Si peaks. Only minor changes in the H and He profiles were observed up to 1073 K, however after the 1273 K anneal the H and He profiles changed considerably, with a marked difference between samples irradiated only with He and those irradiated with He and H. © 2025 Trans Tech Publications Ltden_AU
dc.identifier.booktitleTHERMEC 2016 : selected peer reviewed papers from the 9th International Conference on Processing & Manufacturing of Advanced Materials, May 29-June 03, 2016, Graz, Austriaen_AU
dc.identifier.citationIonescu, M., Deslandes, A., Holmes, R., Guenette, M. C., Karatchevtseva, I., & Lumpkin, G. R. (2016). Effect of annealing upon retention of He and H in irradiated SiC. Paper presented to THERMEC 2016 : 9th International Conference on Processing & Manufacturing of Advanced Materials, May 29-June 03, 2016. In Materials Science Forum (Vol. 879, pp. 810–814). doi:10.4028/www.scientific.net/msf.879.810en_AU
dc.identifier.conferenceenddate2016-06en_AU
dc.identifier.conferencenameThermec 2016: 9th International Conference on Processing & Manufacturing of Advanced Materialsen_AU
dc.identifier.conferenceplaceGraz, Austriaen_AU
dc.identifier.conferencestartdate2016-05-29en_AU
dc.identifier.editorsC. Sommitsch, M. Ionescu, B. Mishra, E. Kozeschnik & T. Chandraen_AU
dc.identifier.isbn9783035711295en_AU
dc.identifier.issn0255-5476en_AU
dc.identifier.issn1662-9752en_AU
dc.identifier.journaltitleMaterials Science Forumen_AU
dc.identifier.pagination810-814en_AU
dc.identifier.placeofpublicationZurich, Switzerlanden_AU
dc.identifier.urihttps://doi.org/10.4028/www.scientific.net/msf.879.810en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15935en_AU
dc.identifier.volume879en_AU
dc.language.isoenen_AU
dc.publisherTrans Tech Publicationsen_AU
dc.subjectSilicon carbidesen_AU
dc.subjectIrradiationen_AU
dc.subjectIonsen_AU
dc.subjectkeV range 10-100en_AU
dc.subjectEnergyen_AU
dc.subjectElasticityen_AU
dc.subjectAnnealingen_AU
dc.subjectRaman spectroscopyen_AU
dc.titleEffect of annealing upon retention of He and H in irradiated SiCen_AU
dc.typeConference Paperen_AU
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