Effect of annealing upon retention of He and H in irradiated SiC
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Date
2017
Journal Title
Journal ISSN
Volume Title
Publisher
Trans Tech Publications
Abstract
Silicon carbide (3C-β SiC) samples were irradiated with He ions of energy up to 30 keV and a fluence up to 1016/cm2, to produce damage in the near-surface region. A duplicate set of He ion irradiated SiC samples, as well as undamaged SiC, were also irradiated with H2+ ions of energy up to 20 keV and a similar fluence, to study the interaction of H species with pristine SiC and with He radiation-damaged SiC. Samples were annealed in steps of 200 K, from 473 K to 1273 K, and the retention of H and He were measured using elastic recoil detection analysis with 7.8 MeV C3+ ions, after each anneal step. Modification to the surface following irradiation is observed via Raman spectroscopy, which exhibits development of damage states such as disordered carbon and Si-Si peaks. Only minor changes in the H and He profiles were observed up to 1073 K, however after the 1273 K anneal the H and He profiles changed considerably, with a marked difference between samples irradiated only with He and those irradiated with He and H. © 2025 Trans Tech Publications Ltd
Description
Keywords
Silicon carbides, Irradiation, Ions, keV range 10-100, Energy, Elasticity, Annealing, Raman spectroscopy
Citation
Ionescu, M., Deslandes, A., Holmes, R., Guenette, M. C., Karatchevtseva, I., & Lumpkin, G. R. (2016). Effect of annealing upon retention of He and H in irradiated SiC. Paper presented to THERMEC 2016 : 9th International Conference on Processing & Manufacturing of Advanced Materials, May 29-June 03, 2016. In Materials Science Forum (Vol. 879, pp. 810–814). doi:10.4028/www.scientific.net/msf.879.810