Charge trapping and defect segregation in quartz

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dc.contributor.authorStevens Kalceff, MAen_AU
dc.contributor.authorThorogood, GJen_AU
dc.contributor.authorShort, KTen_AU
dc.date.accessioned2022-04-21T08:00:14Zen_AU
dc.date.available2022-04-21T08:00:14Zen_AU
dc.date.issued1999-06-14en_AU
dc.date.statistics2022-04-07en_AU
dc.description.abstractIrradiation induced charging of wide band gap materials may significantly influence the development of radiation damage and associated defect migration. Charge trapped at irradiation induced and/or pre-existing defects induces a localized electric field within the irradiated volume of specimen. The powerful combination of cathodoluminescence microanalysis and electric force microscopy allows direct monitoring of the development of the irradiation induced charge distribution and its effect on the microscopic spatial segregation of defects. These techniques have been used to demonstrate the important influence of the induced local field on the microscopic defect structure of quartz. © 1999 American Institute of Physicsen_AU
dc.identifier.citationStevens Kalceff, M. A., Thorogood, G. J., & Short, K. T. (1999). Charge trapping and defect segregation in quartz. Journal of Applied Physics, 86(1), 205-208. doi:10.1063/1.370718en_AU
dc.identifier.issn1089-7550en_AU
dc.identifier.issue1en_AU
dc.identifier.journaltitleJournal of Applied Physicsen_AU
dc.identifier.pagination205-208en_AU
dc.identifier.urihttps://doi.org/10.1063/1.370718en_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/13064en_AU
dc.identifier.volume86en_AU
dc.language.isoenen_AU
dc.publisherAIP Publishingen_AU
dc.subjectQuartzen_AU
dc.subjectDefectsen_AU
dc.subjectPhysical radiation effectsen_AU
dc.subjectElectric fieldsen_AU
dc.subjectCathodoluminescenceen_AU
dc.subjectMicroanalysisen_AU
dc.subjectCharge distributionen_AU
dc.subjectSegregationen_AU
dc.titleCharge trapping and defect segregation in quartzen_AU
dc.typeJournal Articleen_AU
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