Charge trapping and defect segregation in quartz

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Date
1999-06-14
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Publisher
AIP Publishing
Abstract
Irradiation induced charging of wide band gap materials may significantly influence the development of radiation damage and associated defect migration. Charge trapped at irradiation induced and/or pre-existing defects induces a localized electric field within the irradiated volume of specimen. The powerful combination of cathodoluminescence microanalysis and electric force microscopy allows direct monitoring of the development of the irradiation induced charge distribution and its effect on the microscopic spatial segregation of defects. These techniques have been used to demonstrate the important influence of the induced local field on the microscopic defect structure of quartz. © 1999 American Institute of Physics
Description
Keywords
Quartz, Defects, Physical radiation effects, Electric fields, Cathodoluminescence, Microanalysis, Charge distribution, Segregation
Citation
Stevens Kalceff, M. A., Thorogood, G. J., & Short, K. T. (1999). Charge trapping and defect segregation in quartz. Journal of Applied Physics, 86(1), 205-208. doi:10.1063/1.370718
URI
https://doi.org/10.1063/1.370718
 https://apo.ansto.gov.au/dspace/handle/10238/13064
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