A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2
dc.contributor.author | Su, Y | en_AU |
dc.contributor.author | Tsujimoto, Y | en_AU |
dc.contributor.author | Miura, A | en_AU |
dc.contributor.author | Asai, S | en_AU |
dc.contributor.author | Avdeev, M | en_AU |
dc.contributor.author | Ogino, H | en_AU |
dc.contributor.author | Ako, M | en_AU |
dc.contributor.author | Belik, AA | en_AU |
dc.contributor.author | Masuda, T | en_AU |
dc.contributor.author | Uchikoshi, T | en_AU |
dc.contributor.author | Yamaura, K | en_AU |
dc.date.accessioned | 2021-07-28T01:05:06Z | en_AU |
dc.date.available | 2021-07-28T01:05:06Z | en_AU |
dc.date.issued | 2017-03-13 | en_AU |
dc.date.statistics | 2021-07-13 | en_AU |
dc.description.abstract | A new square-planar zinc oxyhalide, Sr2ZnO2Cl2, was successfully synthesized using a high-pressure method. Absorption spectroscopy revealed an indirect band gap of 3.66 eV. Electronic structure calculations indicated a strong hybridization between Zn 3dx2−y2 and O 2p orbitals, which is distinct from tetrahedrally coordinated ZnO. © Royal Society of Chemistry 2021 | en_AU |
dc.identifier.citation | Su, Y., Tsujimoto, Y., Miura, A., Asai, S., Avdeev, M., Ogino, H., Ako, M., Belik, A. A., Masuda, T., Uchikoshi, T., & Yamaura, K. (2017). A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2. Chemical Communications, 53(27), 3826-3829. doi:10.1039/C7CC01011G | en_AU |
dc.identifier.issn | 1364-548X | en_AU |
dc.identifier.issue | 27 | en_AU |
dc.identifier.journaltitle | Chemical Communications | en_AU |
dc.identifier.pagination | 3826-3829 | en_AU |
dc.identifier.uri | https://doi.org/10.1039/C7CC01011G | en_AU |
dc.identifier.uri | https://apo.ansto.gov.au/dspace/handle/10238/11122 | en_AU |
dc.identifier.volume | 53 | en_AU |
dc.language.iso | en | en_AU |
dc.publisher | Royal Society of Chemistry | en_AU |
dc.subject | Absorption spectroscopy | en_AU |
dc.subject | Electronic structure | en_AU |
dc.subject | Oxyhalides | en_AU |
dc.subject | Pressure range mega pa 10-100 | en_AU |
dc.subject | Semiconductor materials | en_AU |
dc.subject | Chemical reactions | en_AU |
dc.subject | Zinc | en_AU |
dc.subject | Zinc oxides | en_AU |
dc.title | A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2 | en_AU |
dc.type | Journal Article | en_AU |
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