A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2
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Date
2017-03-13
Journal Title
Journal ISSN
Volume Title
Publisher
Royal Society of Chemistry
Abstract
A new square-planar zinc oxyhalide, Sr2ZnO2Cl2, was successfully synthesized using a high-pressure method. Absorption spectroscopy revealed an indirect band gap of 3.66 eV. Electronic structure calculations indicated a strong hybridization between Zn 3dx2−y2 and O 2p orbitals, which is distinct from tetrahedrally coordinated ZnO. © Royal Society of Chemistry 2021
Description
Keywords
Absorption spectroscopy, Electronic structure, Oxyhalides, Pressure range mega pa 10-100, Semiconductor materials, Chemical reactions, Zinc, Zinc oxides
Citation
Su, Y., Tsujimoto, Y., Miura, A., Asai, S., Avdeev, M., Ogino, H., Ako, M., Belik, A. A., Masuda, T., Uchikoshi, T., & Yamaura, K. (2017). A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2. Chemical Communications, 53(27), 3826-3829. doi:10.1039/C7CC01011G