Analysis of nitrogen-implanted tin oxide films used in dye-sensitised solar cells
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Date
2003-02-03
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Journal ISSN
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Publisher
Australian Institute of Physics
Abstract
Nitrogen was implanted in SnO2:F film using ion energies between 10 and 40 keV and ion dose range 1014 – 1016 cm-2. The microstructure of the film was modified by the ion implantation giving an amorphous region of various thicknesses. The amount of N was found to increase with increasing ion dose and energy. A maximum concentration of 5% N was measured in the highest ion dose and energy implanted sample.
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Keywords
Nitrogen, Tin oxides, Solar cells, keV range, keV range 10-100, Photoelectrochemical cells, Transmission electron microscopy
Citation
Tesfamichael, T., Will, G., Kelly, I., & Bell, J. (2003). Analysis of nitrogen-implanted tin oxide films used in dye-sensitised solar cells. Paper presented to the "27th Annual Condensed Matters and Materials Meeting, Wagga, 2003", Charles Stuart University, Wagga, Wagga, NSW, Australia, 4th - 7th February 2003. Retrieved from: https://www.physics.org.au/wp-content/uploads/cmm/2003/WW03_05.pdf