dLow temperature of formation of nickel germanide by reaction of nickel and crystalline germanium

Algahtani, F; Leech, PW; Reeves, GK; Holland, AS; Blackford, MG; Thorogood, GJ; McCallum, JC; Johnson, BC

dLow temperature of formation of nickel germanide by reaction of nickel and crystalline germanium

Date

2014-12

Authors

Publisher

Springer Nature

Abstract

The formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in an attempt to minimize the thermal budget for the process. Cross-sectional Transmission Electron Microscopy (TEM) was used to determine the texture of the germanide layer and the morphology and constituent composition of the Ge/NiGe interface. The onset and completion of reaction between Ni and Ge were identified by means of a heated stage in combination with in-situ x-ray diffraction (XRD) measurements. The stages of reaction were also monitored using measurements of sheet resistance of the germanides by the Van der Pauw technique. The results have shown that the minimum temperature for the initiation of reaction of Ni and Ge to form NiGe was 225 °C. However, an annealing temperature > 275 °C was necessary for the extensive (and practical) formation of NiGe. Between 200 and 300 °C, the duration of annealing required for the formation of NiGe was significantly longer than at higher temperatures. The stoichiometry of the germanide was very close to NiGe (1:1) as determined using energy dispersive spectroscopy (EDS).

Keywords

Temperature range, Nickel, Germanides, Thin Films, Transmission electron microscopy, Oxygen, Layers, Morphology

Citation

Algahtani, F., Leech, P. W., Reeves, G. K., Holland, A. S., Blackford, M., Thorogood, G., McCallum, J. C., & Johnson, B. C. (2014). dLow temperature of formation of nickel germanide by reaction of nickel and crystalline germanium. Paper presented to the Solid-State Chemistry of Inforganic Materials, December 1-6, 2013, Boston, Massachusetts, USA. In MRS Proceedings, 1655, 320. doi:org/10.1557/opl.2014.408