Charge collection efficiency degradation induced by MeV ions in semiconductor devices: model and experiment

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dc.contributor.authorVittone, Een_AU
dc.contributor.authorPastuovic, Zen_AU
dc.contributor.authorBreese, Men_AU
dc.contributor.authorGarcia Lopez, Jen_AU
dc.contributor.authorJakšić, Men_AU
dc.contributor.authorRaisanen, Jen_AU
dc.contributor.authorSiegele, Ren_AU
dc.contributor.authorSimon, Aen_AU
dc.contributor.authorVizkelethy, Gen_AU
dc.date.accessioned2016-04-06T02:15:50Zen_AU
dc.date.available2016-04-06T02:15:50Zen_AU
dc.date.issued2016-01-01en_AU
dc.date.statistics2016-04-06en_AU
dc.description.abstractThis paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials. © 2016 Elsevier B.V.en_AU
dc.identifier.citationVittone, E., Pastuovic, Z., Breese, M. B. H., Garcia Lopez, J., Jakšić, M., Raisanen, J., Siegele, R., Simon, A., & Vizkelethy, G. (2016). Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 372, 128-142. doi:10.1016/j.nimb.2016.01.030en_AU
dc.identifier.govdoc6562en_AU
dc.identifier.issn0168-583Xen_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atomsen_AU
dc.identifier.pagination128-142en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2016.01.030en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/6699en_AU
dc.identifier.volume372en_AU
dc.language.isoenen_AU
dc.publisherElsvieren_AU
dc.subjectSilicon diodesen_AU
dc.subjectMeV rangeen_AU
dc.subjectIonsen_AU
dc.subjectSemiconductor devicesen_AU
dc.subjectBinary fissionen_AU
dc.subjectPhysical radiation effectsen_AU
dc.titleCharge collection efficiency degradation induced by MeV ions in semiconductor devices: model and experimenten_AU
dc.typeJournal Articleen_AU
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