New modes of THz generation by low-temperature-grown GaAsSb

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dc.contributor.authorHargreaves, Sen_AU
dc.contributor.authorBignell, LJen_AU
dc.contributor.authorLewis, RAen_AU
dc.contributor.authorSigmund, Jen_AU
dc.contributor.authorHartnagel, HLen_AU
dc.date.accessioned2010-04-06T01:38:33Zen_AU
dc.date.accessioned2010-04-30T05:09:10Zen_AU
dc.date.available2010-04-06T01:38:33Zen_AU
dc.date.available2010-04-30T05:09:10Zen_AU
dc.date.issued2009-02en_AU
dc.date.statistics2009-02en_AU
dc.description.abstractThe low-temperature growth of GaAs1−ySby with y = 0.4 and 0.85 has been reported recently along with characterization by X-ray diffraction, Hall, and current–voltage measurements. Here we extend the characterization by employing reflectance spectroscopy in the range 5–18 THz to confirm the compositions of the grown layers. In the course of this work we established for the first time that GaAs1−ySby may serve as an emitter of THz radiation under optical excitation by ultrashort pulses of near-infrared radiation in two distinct experimental arrangements: THz is generated when an electrical bias is applied through a simple electrode structure, attributed to a photoconductive effect; and THz is generated by the pristine layers themselves, attributed to a surface-field effect. In each case the THz emission is compared directly with that from low-temperature-grown GaAs. The results presented here are for as-grown material. Suitable annealing may improve the THz emission even further. © 2009, Elsevier Ltd.en_AU
dc.identifier.citationHargreaves, S., Bignell, L. J., Lewis, R. A., Sigmund, J., & Hartnagel, H. L. (2009). New modes of THz generation by low-temperature-grown GaAsSb. Solid-State Electronics, 53(2), 160-165. doi:10.1016/j.sse.2008.10.015en_AU
dc.identifier.govdoc1590en_AU
dc.identifier.issn0038-1101en_AU
dc.identifier.issue2en_AU
dc.identifier.journaltitleSolid-State Electronicsen_AU
dc.identifier.pagination160-165en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2008.10.015en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/3038en_AU
dc.identifier.volume53en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectTHz rangeen_AU
dc.subjectX-ray diffractionen_AU
dc.subjectElectric potentialen_AU
dc.subjectLayersen_AU
dc.subjectGallium arsenidesen_AU
dc.subjectInfrared radiationen_AU
dc.titleNew modes of THz generation by low-temperature-grown GaAsSben_AU
dc.typeJournal Articleen_AU
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