Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources
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Date
2009-03-15
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American Institute of Physics
Abstract
P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiation sources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a silicon bolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98 +/- 10 nW in this experiment. © 2009, American Institute of Physics
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Keywords
Radiation sources, Thermal radiation, THz range, P-type conductors, Blackbody radiation, Bolometers
Citation
Smith, M. L., Mendis, R., Vickers, R. E. M., & Lewis, R. A. (2009). Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources. Journal of Applied Physics, 105(6), 4.