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|Title: ||Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources.|
|Authors: ||Smith, ML|
|Keywords: ||Radiation Sources|
|Issue Date: ||15-Mar-2009|
|Publisher: ||American Institute of Physics|
|Citation: ||Smith, M. L., Mendis, R., Vickers, R. E. M., & Lewis, R. A. (2009). Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources. Journal of Applied Physics, 105(6), 4.|
|Abstract: ||P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiation sources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a silicon bolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98 +/- 10 nW in this experiment. © 2009, American Institute of Physics|
|Appears in Collections:||Journal Articles|
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