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Please use this identifier to cite or link to this item: http://apo.ansto.gov.au/dspace/handle/10238/1332

Title: Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources.
Authors: Smith, ML
Mendis, R
Vickers, REM
Lewis, RA
Keywords: Radiation Sources
Thermal Radiation
THz Range
P-Type Conductors
Blackbody Radiation
Bolometers
Issue Date: 15-Mar-2009
Publisher: American Institute of Physics
Citation: Smith, M. L., Mendis, R., Vickers, R. E. M., & Lewis, R. A. (2009). Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources. Journal of Applied Physics, 105(6), 4.
Abstract: P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiation sources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a silicon bolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98 +/- 10 nW in this experiment. © 2009, American Institute of Physics
URI: http://dx.doi.org/10.1063/1.3095758
http://apo.ansto.gov.au/dspace/handle/10238/1332
ISSN: 0021-8979
Appears in Collections:Journal Articles

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