Growth of high purity liquid phase epitaxial GaAs in a silica growth system

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dc.contributor.authorButcher, KSAen_AU
dc.contributor.authorMo, Len_AU
dc.contributor.authorAlexiev, Den_AU
dc.contributor.authorTansley, TLen_AU
dc.date.accessioned2010-08-23T05:36:47Zen_AU
dc.date.available2010-08-23T05:36:47Zen_AU
dc.date.issued1995-12-01en_AU
dc.date.statistics1995-12-01en_AU
dc.description.abstractLiquid phase epitaxial gallium arsenide layers, greater than 200 μm thickness and with a low net carrier concentration (NA,D ≈ 1013 cm−3) have been grown in a silicia growth system with silica crucibles. Analysis of electrical and chemical defects was carried out using capacitance-voltage (C---V) measurements, deep level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Details of the growth procedure are given and it is shown that silicon incorporation in the growth layer is not suppressed by the addition of ppm levels of oxygen to the main hydrogen flow. © 1995, Elsevier Ltd.en_AU
dc.identifier.citationButcher, K. S. A., Mo, L., Alexiev, D., & Tansley, T. L. (1995). Growth of high purity liquid phase epitaxial GaAs in a silica growth system. Journal of Crystal Growth, 156(4), 361-367. doi:10.1016/0022-0248(95)00297-9en_AU
dc.identifier.govdoc2502en_AU
dc.identifier.issn0022-0248en_AU
dc.identifier.issue4en_AU
dc.identifier.journaltitleJournal of Crystal Growthen_AU
dc.identifier.pagination361-367en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/0022-0248(95)00297-9en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/2304en_AU
dc.identifier.volume156en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectSilicaen_AU
dc.subjectGallium arsenidesen_AU
dc.subjectIon microprobe analysisen_AU
dc.subjectMass spectroscopyen_AU
dc.subjectDefectsen_AU
dc.subjectGrowth factorsen_AU
dc.titleGrowth of high purity liquid phase epitaxial GaAs in a silica growth systemen_AU
dc.typeJournal Articleen_AU
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