Growth of high purity liquid phase epitaxial GaAs in a silica growth system
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Date
1995-12-01
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Publisher
Elsevier
Abstract
Liquid phase epitaxial gallium arsenide layers, greater than 200 μm thickness and with a low net carrier concentration (NA,D ≈ 1013 cm−3) have been grown in a silicia growth system with silica crucibles. Analysis of electrical and chemical defects was carried out using capacitance-voltage (C---V) measurements, deep level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Details of the growth procedure are given and it is shown that silicon incorporation in the growth layer is not suppressed by the addition of ppm levels of oxygen to the main hydrogen flow. © 1995, Elsevier Ltd.
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Keywords
Silica, Gallium arsenides, Ion microprobe analysis, Mass spectroscopy, Defects, Growth factors
Citation
Butcher, K. S. A., Mo, L., Alexiev, D., & Tansley, T. L. (1995). Growth of high purity liquid phase epitaxial GaAs in a silica growth system. Journal of Crystal Growth, 156(4), 361-367. doi:10.1016/0022-0248(95)00297-9