Rapid thermal annealing of neutron transmutation doped silicon

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dc.contributor.authorLawson, EMen_AU
dc.contributor.authorLee, PJen_AU
dc.date.accessioned2008-02-25T01:20:05Zen_AU
dc.date.accessioned2010-04-30T04:42:37Zen_AU
dc.date.available2008-02-25T01:20:05Zen_AU
dc.date.available2010-04-30T04:42:37Zen_AU
dc.date.issued1987-10en_AU
dc.description.abstractRapid thermal annealing of neutron transmutation doped silicon wafers is shown to be an alternative to the normal furnace annealing procedure. A prototype incoherent light rapid thermal annealing 4.5 kW furnace has been constructed which can raise the temperature of 75mm diameter silicon wafers to 1120°C. Successful annealing is demonstrated by comparing the resistivities of the wafers with those from the furnace annealed standards. Deep level transient spectrometry has been performed to show that there are no electrically active deep level impurities present. Although there is evidence for crystalline slip it does not appear to affect the results.en_AU
dc.identifier.citationLawson, E. M., & Lee, P. J. (1987). Rapid thermal annealing of neutron transmutation doped silicon. (ANSTO/E665). Lucas Heights, NSW: Australian Nuclear Science and Technology Organisation.en_AU
dc.identifier.govdoc939en_AU
dc.identifier.isbn064259869Xen_AU
dc.identifier.issn1030-7745en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/1002en_AU
dc.language.isoenen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.relation.ispartofseriesANSTO External Reportsen_AU
dc.relation.ispartofseriesANSTO-E-665en_AU
dc.subjectAnnealingen_AU
dc.subjectElectric conductivityen_AU
dc.subjectIrradiationen_AU
dc.subjectSiliconen_AU
dc.subjectTransmutationen_AU
dc.subjectTemperature range 1000-4000 Ken_AU
dc.subjectCrystal dopingen_AU
dc.titleRapid thermal annealing of neutron transmutation doped siliconen_AU
dc.typeExternal Reporten_AU
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