Liquid phase epitaxy of gallium arsenide - a review

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dc.contributor.authorAlexiev, Den_AU
dc.date.accessioned2007-11-22T04:29:31Zen_AU
dc.date.accessioned2010-04-30T04:39:36Zen_AU
dc.date.available2007-11-22T04:29:31Zen_AU
dc.date.available2010-04-30T04:39:36Zen_AU
dc.date.issued1992-07en_AU
dc.description.abstractLiquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed.en_AU
dc.identifier.citationAlexiev, D. (1992). Liquid phase epitaxy of gallium arsenide - a review (ANSTO/E-702). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation.en_AU
dc.identifier.govdoc750en_AU
dc.identifier.isbn0642599432en_AU
dc.identifier.isbn0642599432en_AU
dc.identifier.issn10307745en_AU
dc.identifier.otherANSTO-E-702en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/740en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.subjectGallium arsenidesen_AU
dc.subjectLiquid phase epitaxyen_AU
dc.subjectSemiconductor devicesen_AU
dc.subjectMeasuring instrumentsen_AU
dc.subjectHydrogenen_AU
dc.subjectSolventsen_AU
dc.titleLiquid phase epitaxy of gallium arsenide - a reviewen_AU
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