Liquid phase epitaxy of gallium arsenide - a review
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Date
1992-07
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Nuclear Science and Technology Organisation
Abstract
Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed.
Description
Keywords
Gallium arsenides, Liquid phase epitaxy, Semiconductor devices, Measuring instruments, Hydrogen, Solvents
Citation
Alexiev, D. (1992). Liquid phase epitaxy of gallium arsenide - a review (ANSTO/E-702). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation.