Etch rates for (100) gallium arsenide using aqueous h2so4h2o and aqua regia based etchants.

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dc.contributor.authorKeane, Men_AU
dc.contributor.authorButcher, KSAen_AU
dc.contributor.authorAlexiev, Den_AU
dc.date.accessioned2007-11-22T04:29:30Zen_AU
dc.date.accessioned2010-04-30T04:39:34Zen_AU
dc.date.available2007-11-22T04:29:30Zen_AU
dc.date.available2010-04-30T04:39:34Zen_AU
dc.date.issued1991-09en_AU
dc.description.abstractEtch rate experiments were carried out for (100) GaAs using etching solutions of H2SO4 :H2O2 :H2O (3:1:1 3:1:15) HCl:HNO3 (3:1) HCl:HNO3 :H2O (1: 1:1) and HCl:HNO3 :glycerol (with various dilutions of glycerol). Several differences were seen for the (100) plane compared to previous results for other crystal orientations. The sulphuric acid solutions showed much lower activation energies for etching the (100) plane. The HCl:HNO3 :glycerol solutions showed considerably lower etch rates for the (100) plane probably indicating that they etch GaAs anisotropically. For a 1:1:2 solution of HCl:HNO3 :glycerol a decrease in the etch rate of (100) GaAs was observed in the presence of stirring. This is the opposite result to what is commonly assumed for this polishing etchant. It indicates that the main polishing process attributed to this etchant is not present and in fact the polishing quality of the etchant is probably limited by the etching process which is present.en_AU
dc.identifier.citationKeane, M., Butcher, K., Alexiev, D. (1991). Etch rates for (100) gallium arsenide using aqueous h2so4h2o and aqua regia based etchants (ANSTO/E699). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisationen_AU
dc.identifier.govdoc749en_AU
dc.identifier.isbn642599149en_AU
dc.identifier.isbn0642599149en_AU
dc.identifier.issn10307745en_AU
dc.identifier.otherANSTO-E-699en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/739en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.subjectGallium arsenidesen_AU
dc.subjectAqueous solutionsen_AU
dc.subjectAqua regiaen_AU
dc.subjectEtchingen_AU
dc.subjectActivation energyen_AU
dc.subjectSulfuric aciden_AU
dc.subjectStirringen_AU
dc.titleEtch rates for (100) gallium arsenide using aqueous h2so4h2o and aqua regia based etchants.en_AU
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