Deep level transient conductance spectrometer for high resistivity semiconductors using a marginal oscillator detector.

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dc.contributor.authorAlexiev, Den_AU
dc.contributor.authorTavendale, AJen_AU
dc.date.accessioned2007-11-22T04:28:13Zen_AU
dc.date.accessioned2010-04-30T04:39:00Zen_AU
dc.date.available2007-11-22T04:28:13Zen_AU
dc.date.available2010-04-30T04:39:00Zen_AU
dc.date.issued1984-09en_AU
dc.description.abstractA deep level transient conductance spectrometer for high resistivity semiconductors, using a radiofrequency (~40 MHz) marginal oscillator as a conductance detector, is described. Spectra are generated by periodically filling deep level trapping centres with carriers stimulated by a pulsed GaAs laser, and processing the trap-emptying conductance signal through an exponential Miller correlator as the sample temperature is slowly ramped. Simple capacitive coupling of samples to the oscillator tank circuit eliminates problems such as unwanted defect annealing and other material changes often associated with the high temperature techniques necessary for ohmic contact formation. Representative deep level spectra are given for semi-insulating Bridgman-grown CdTe.en_AU
dc.identifier.citationAlexiev, D., Tavendale, A. 1984). A deep level transient conductance spectrometer for high resistivity semiconductors using a marginal oscillator detector (AAEC-E-598). Lucas Heights N.S.W.: Australian Atomic Energy Commission, Research Establishment.en_AU
dc.identifier.govdoc713en_AU
dc.identifier.isbn0642597987en_AU
dc.identifier.otherAAEC-E-598en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/703en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectCadmium telluridesen_AU
dc.subjectOscillatorsen_AU
dc.subjectSemiconductor materialsen_AU
dc.subjectSpectrometersen_AU
dc.titleDeep level transient conductance spectrometer for high resistivity semiconductors using a marginal oscillator detector.en_AU
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