Surface passivation of liquid phase epitaxial GaAS

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dc.contributor.authorAlexiev, Den_AU
dc.contributor.authorButcher, KSAen_AU
dc.contributor.authorMo, Len_AU
dc.contributor.authorEdmondson, Men_AU
dc.date.accessioned2007-11-22T04:19:35Zen_AU
dc.date.accessioned2010-04-30T04:33:45Zen_AU
dc.date.available2007-11-22T04:19:35Zen_AU
dc.date.available2010-04-30T04:33:45Zen_AU
dc.date.issued1995-10en_AU
dc.description.abstractPassivation of the liquid phase epitaxial GaAs surface was attempted using aqueous P2S5 -NH4OH (NH4)2Sx and plasma nitrogenation and hydrogenation. Results indicate that plasma nitrogenation with pretreatment of plasma hydrogenation produced consistent reduction in reverse leakage current at room temperature for all p and n type Schottky diodes. Some diodes showed an order of magnitude improvement in current density. (NH4)2Sx passivation also results in improved I-V characteristics though the long term stability of this passivation is questionable.en_AU
dc.identifier.citationAlexiev, D., Butcher, K. S. A., Mo, L., & Edmondson, M.(1995). Surface passivation of liquid phase epitaxial gaas (ANSTO/E724). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation, Lucas Heights Research Laboratories.en_AU
dc.identifier.govdoc412en_AU
dc.identifier.isbn0642599629en_AU
dc.identifier.issn10307745en_AU
dc.identifier.otherANSTO-E-724en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/337en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.subjectPassivationen_AU
dc.subjectHydrogenationen_AU
dc.subjectSemiconductor devicesen_AU
dc.subjectChemical reactionsen_AU
dc.titleSurface passivation of liquid phase epitaxial GaASen_AU
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