Surface passivation of liquid phase epitaxial GaAS
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Date
1995-10
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Nuclear Science and Technology Organisation
Abstract
Passivation of the liquid phase epitaxial GaAs surface was attempted using aqueous P2S5 -NH4OH (NH4)2Sx and plasma nitrogenation and hydrogenation. Results indicate that plasma nitrogenation with pretreatment of plasma hydrogenation produced consistent reduction in reverse leakage current at room temperature for all p and n type Schottky diodes. Some diodes showed an order of magnitude improvement in current density. (NH4)2Sx passivation also results in improved I-V characteristics though the long term stability of this passivation is questionable.
Description
Keywords
Passivation, Hydrogenation, Semiconductor devices, Chemical reactions
Citation
Alexiev, D., Butcher, K. S. A., Mo, L., & Edmondson, M.(1995). Surface passivation of liquid phase epitaxial gaas (ANSTO/E724). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation, Lucas Heights Research Laboratories.