Lithium compensation of GaAs.

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dc.contributor.authorAlexiev, Den_AU
dc.contributor.authorTavendale, AJen_AU
dc.date.accessioned2007-11-22T04:13:16Zen_AU
dc.date.accessioned2010-04-30T04:31:55Zen_AU
dc.date.available2007-11-22T04:13:16Zen_AU
dc.date.available2010-04-30T04:31:55Zen_AU
dc.date.issued1988-08en_AU
dc.description.abstractDefects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments the effect of Li diffusion on existing trap spectra defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made.en_AU
dc.identifier.citationAlexieu, D., & Tavendale, A. (1988). Lithium compensation of GaAs (ANSTO/E-676). Lucas Heights, NSW: Australian Nuclear Science and Technology Organisation Lucas Heights Research Laboratories.en_AU
dc.identifier.govdoc311en_AU
dc.identifier.isbn0642598908en_AU
dc.identifier.isbn0642598908en_AU
dc.identifier.issn10307745en_AU
dc.identifier.issn1030-7745en_AU
dc.identifier.otherANSTO-E-676en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/131en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.subjectSemiconductor materialsen_AU
dc.subjectSpectroscopyen_AU
dc.subjectArsenidesen_AU
dc.subjectSpectroscopyen_AU
dc.subjectLithiumen_AU
dc.subjectGalliumen_AU
dc.subjectDiffusionen_AU
dc.titleLithium compensation of GaAs.en_AU
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