Lithium compensation of GaAs.
Loading...
Date
1988-08
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Australian Nuclear Science and Technology Organisation
Abstract
Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments the effect of Li diffusion on existing trap spectra defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made.
Description
Keywords
Semiconductor materials, Spectroscopy, Arsenides, Spectroscopy, Lithium, Gallium, Diffusion
Citation
Alexieu, D., & Tavendale, A. (1988). Lithium compensation of GaAs (ANSTO/E-676). Lucas Heights, NSW: Australian Nuclear Science and Technology Organisation Lucas Heights Research Laboratories.