Electrochemical grafting of organic films on silica

dc.contributor.authorDatson, Zen_AU
dc.contributor.authorDief, Een_AU
dc.contributor.authorLi, Ten_AU
dc.contributor.authorLe Brun, APen_AU
dc.contributor.authorDarwish, Nen_AU
dc.date.accessioned2025-03-11T03:15:42Zen_AU
dc.date.available2025-03-11T03:15:42Zen_AU
dc.date.issued2022-10-11en_AU
dc.date.statistics2024-08-28en_AU
dc.description.abstractTraditionally, self-assembled monolayers formed on silicon require the removal of the insulating and chemically inert silica layer that naturally forms on the surface of crystalline silicon. The removal of silica is thought to be necessary in order to expose the conducting Si–H surface, which is reactive towards molecules. Here we report the unexpected result of electrochemical formation of thin organic films on silica-terminated silicon with silica thickness up to 20 nm. The process is facilitated by the electrochemical generation of aryl radicals that react with silanol groups at the distal end of silica. © Royal Society of Chemistry 2024.en_AU
dc.format.mediumElectronicen_AU
dc.identifier.citationDatson, Z., Dief, E., Li, T., Le Brun, A., & Darwish, N. (2022). Electrochemical grafting of organic films on silica [10.1039/D2CC03169H]. Chemical Communications, 58(81), 11378-11381. doi.org/10.1039/D2CC03169Hen_AU
dc.identifier.issn1359-7345en_AU
dc.identifier.issn1364-548Xen_AU
dc.identifier.issue81en_AU
dc.identifier.journaltitleChemical Communicationsen_AU
dc.identifier.pagination11378-11381en_AU
dc.identifier.urihttps://doi.org/10.1039/d2cc03169hen_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/16039en_AU
dc.identifier.volume58en_AU
dc.languageEnglishen_AU
dc.language.isoenen_AU
dc.publisherRoyal Society of Chemistry (RSC)en_AU
dc.subjectElectrochemistryen_AU
dc.subjectFilmsen_AU
dc.subjectSilicaen_AU
dc.subjectOrganic matteren_AU
dc.subjectSiliconen_AU
dc.subjectRadicalsen_AU
dc.subjectMoleculesen_AU
dc.titleElectrochemical grafting of organic films on silicaen_AU
dc.typeJournal Articleen_AU
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