Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/9269
Title: XPS and TEM study of deposited and Ru–Si solid state reaction grown ruthenium silicides on silicon
Authors: Jelenković, EV
To, S
Blackford, MG
Kutsay, O
Jha, SK
Keywords: Ruthenium silicides
X-ray photoelectron spectroscopy
Raman spectroscopy
Transmission electron microscopy
Sputtering
Electrical properties
Thin films
Protective coatings
Issue Date: 1-Dec-2015
Publisher: Elsevier
Citation: Jelenković, E. V., To, S., Blackford, M. G., Kutsay, O., & Jha, S. K. (2015). XPS and TEM study of deposited and Ru–Si solid state reaction grown ruthenium silicides on silicon. Materials Science in Semiconductor Processing, 40, 817-821. doi.:10.1016/j.mssp.2015.07.085
Abstract: Ru2Si3 silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3 sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides. © 2015 Elsevier Ltd.
Gov't Doc #: 9073
URI: https://doi.org/10.1016/j.mssp.2015.07.085
http://apo.ansto.gov.au/dspace/handle/10238/9269
ISSN: 1369-8001
Appears in Collections:Journal Articles

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