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https://apo.ansto.gov.au/dspace/handle/10238/9269| Title: | XPS and TEM study of deposited and Ru–Si solid state reaction grown ruthenium silicides on silicon |
| Authors: | Jelenković, EV To, S Blackford, MG Kutsay, O Jha, SK |
| Keywords: | Ruthenium silicides X-ray photoelectron spectroscopy Raman spectroscopy Transmission electron microscopy Sputtering Electrical properties Thin films Protective coatings |
| Issue Date: | 1-Dec-2015 |
| Publisher: | Elsevier |
| Citation: | Jelenković, E. V., To, S., Blackford, M. G., Kutsay, O., & Jha, S. K. (2015). XPS and TEM study of deposited and Ru–Si solid state reaction grown ruthenium silicides on silicon. Materials Science in Semiconductor Processing, 40, 817-821. doi.:10.1016/j.mssp.2015.07.085 |
| Abstract: | Ru2Si3 silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3 sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides. © 2015 Elsevier Ltd. |
| Gov't Doc #: | 9073 |
| URI: | https://doi.org/10.1016/j.mssp.2015.07.085 http://apo.ansto.gov.au/dspace/handle/10238/9269 |
| ISSN: | 1369-8001 |
| Appears in Collections: | Journal Articles |
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