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|Title:||XPS and TEM study of deposited and Ru–Si solid state reaction grown ruthenium silicides on silicon|
X-ray photoelectron spectroscopy
Transmission electron microscopy
|Citation:||Jelenković, E. V., To, S., Blackford, M. G., Kutsay, O., & Jha, S. K. (2015). XPS and TEM study of deposited and Ru–Si solid state reaction grown ruthenium silicides on silicon. Materials Science in Semiconductor Processing, 40, 817-821. doi.:10.1016/j.mssp.2015.07.085|
|Abstract:||Ru2Si3 silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3 sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides. © 2015 Elsevier Ltd.|
|Gov't Doc #:||9073|
|Appears in Collections:||Journal Articles|
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