XPS and TEM study of deposited and Ru–Si solid state reaction grown ruthenium silicides on silicon

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dc.contributor.authorJelenković, EVen_AU
dc.contributor.authorTo, Sen_AU
dc.contributor.authorBlackford, MGen_AU
dc.contributor.authorKutsay, Oen_AU
dc.contributor.authorJha, SKen_AU
dc.date.accessioned2020-03-26T23:48:43Zen_AU
dc.date.available2020-03-26T23:48:43Zen_AU
dc.date.issued2015-12-01en_AU
dc.date.statistics2020-03-20en_AU
dc.description.abstractRu2Si3 silicide was prepared in two different ways: (i) through a deposition (D) from a Ru2Si3 sputtering target and (ii) via a solid state reaction (SSR) of ruthenium thin film with silicon to form a rectifying structure silicide/silicon. Both types of silicides were treated at 700 °C in nitrogen ambient for 5 min in order to facilitate crystallization and solid state reaction, respectively. Transmission electron microcopy (TEM), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to study structural, compositional and chemical properties of the two types of silicides. © 2015 Elsevier Ltd.en_AU
dc.identifier.citationJelenković, E. V., To, S., Blackford, M. G., Kutsay, O., & Jha, S. K. (2015). XPS and TEM study of deposited and Ru–Si solid state reaction grown ruthenium silicides on silicon. Materials Science in Semiconductor Processing, 40, 817-821. doi.:10.1016/j.mssp.2015.07.085en_AU
dc.identifier.govdoc9073en_AU
dc.identifier.issn1369-8001en_AU
dc.identifier.journaltitleMaterials Science in Semiconductor Processingen_AU
dc.identifier.pagination817-821en_AU
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2015.07.085en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/9269en_AU
dc.identifier.volume40en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectRuthenium silicidesen_AU
dc.subjectX-ray photoelectron spectroscopyen_AU
dc.subjectRaman spectroscopyen_AU
dc.subjectTransmission electron microscopyen_AU
dc.subjectSputteringen_AU
dc.subjectElectrical propertiesen_AU
dc.subjectThin filmsen_AU
dc.subjectProtective coatingsen_AU
dc.titleXPS and TEM study of deposited and Ru–Si solid state reaction grown ruthenium silicides on siliconen_AU
dc.typeJournal Articleen_AU
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