Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/740
Title: Liquid phase epitaxy of gallium arsenide - a review
Authors: Alexiev, D
Keywords: Gallium arsenides
Liquid phase epitaxy
Semiconductor devices
Measuring instruments
Hydrogen
Solvents
Issue Date: Jul-1992
Publisher: Australian Nuclear Science and Technology Organisation
Citation: Alexiev, D. (1992). Liquid phase epitaxy of gallium arsenide - a review (ANSTO/E-702). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation.
Abstract: Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed.
Gov't Doc #: 750
URI: http://apo.ansto.gov.au/dspace/handle/10238/740
ISBN: 0642599432
0642599432
ISSN: 10307745
Appears in Collections:Scientific and Technical Reports

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