Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/703
Title: Deep level transient conductance spectrometer for high resistivity semiconductors using a marginal oscillator detector.
Authors: Alexiev, D
Tavendale, AJ
Keywords: Cadmium tellurides
Oscillators
Semiconductor materials
Spectrometers
Issue Date: Sep-1984
Publisher: Australian Atomic Energy Commission
Citation: Alexiev, D., Tavendale, A. 1984). A deep level transient conductance spectrometer for high resistivity semiconductors using a marginal oscillator detector (AAEC-E-598). Lucas Heights N.S.W.: Australian Atomic Energy Commission, Research Establishment.
Abstract: A deep level transient conductance spectrometer for high resistivity semiconductors, using a radiofrequency (~40 MHz) marginal oscillator as a conductance detector, is described. Spectra are generated by periodically filling deep level trapping centres with carriers stimulated by a pulsed GaAs laser, and processing the trap-emptying conductance signal through an exponential Miller correlator as the sample temperature is slowly ramped. Simple capacitive coupling of samples to the oscillator tank circuit eliminates problems such as unwanted defect annealing and other material changes often associated with the high temperature techniques necessary for ohmic contact formation. Representative deep level spectra are given for semi-insulating Bridgman-grown CdTe.
Gov't Doc #: 713
URI: http://apo.ansto.gov.au/dspace/handle/10238/703
ISBN: 0642597987
Appears in Collections:Scientific and Technical Reports

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