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Title: | Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: a SIMS study |
Authors: | Lee, J Metson, J Evans, PJ Pal, U Bhattacharyya, D |
Keywords: | Monocrystals Ion implantation Mass spectroscopy Ion microprobe analysis Diffusion Thin films |
Issue Date: | 15-Jan-2010 |
Publisher: | Elsevier |
Citation: | Lee, J., Metson, J., Evans, P. J., Pal, U., & Bhattacharyya, D. (2010). Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: a SIMS study. Applied Surface Science, 256(7), 2143-2146. doi:10.1016/j.apsusc.2009.09.064 |
Abstract: | Implantation and diffusion behavior of Sb, Ti and N in ZnO single crystal and sputter deposited thin films were studied through secondary ion mass spectrometric studies on ion-implanted and thermally annealed samples. Sb was implanted and Ti and N were co-implanted into ZnO single crystals and polycrystalline thin films on Si substrates at room temperature. The implanted samples were then annealed at 800°C. Depth profiles of implant distributions before and after annealing were examined by Secondary Ion Mass Spectrometry (SIMS). As expected, implant range is sensitive to the mass of the dopants; and the dopant distribution is broadened as implanted elements migrate deeper into the film on thermal annealing. While diffusion of N in the ZnO thin film is not significant, Ti tends to diffuse deeper into the sample during annealing. For Ti and N co-implanted single crystal, annealing induced diffusion causes more redistribution of the lighter N than Ti. In general, implanted dopants diffuse more easily in thin films compared to the single crystal due to the presence of grain boundaries in the latter. © 2010, Elsevier Ltd. |
Gov't Doc #: | 1562 |
URI: | http://dx.doi.org/10.1016/j.apsusc.2009.09.064 http://apo.ansto.gov.au/dspace/handle/10238/3213 |
ISSN: | 0169-4332 |
Appears in Collections: | Journal Articles |
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