Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: a SIMS study

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dc.contributor.authorLee, Jen_AU
dc.contributor.authorMetson, Jen_AU
dc.contributor.authorEvans, PJen_AU
dc.contributor.authorPal, Uen_AU
dc.contributor.authorBhattacharyya, Den_AU
dc.date.accessioned2010-04-19T06:41:32Zen_AU
dc.date.accessioned2010-04-30T05:08:44Zen_AU
dc.date.available2010-04-19T06:41:32Zen_AU
dc.date.available2010-04-30T05:08:44Zen_AU
dc.date.issued2010-01-15en_AU
dc.date.statistics2010-01-15en_AU
dc.description.abstractImplantation and diffusion behavior of Sb, Ti and N in ZnO single crystal and sputter deposited thin films were studied through secondary ion mass spectrometric studies on ion-implanted and thermally annealed samples. Sb was implanted and Ti and N were co-implanted into ZnO single crystals and polycrystalline thin films on Si substrates at room temperature. The implanted samples were then annealed at 800°C. Depth profiles of implant distributions before and after annealing were examined by Secondary Ion Mass Spectrometry (SIMS). As expected, implant range is sensitive to the mass of the dopants; and the dopant distribution is broadened as implanted elements migrate deeper into the film on thermal annealing. While diffusion of N in the ZnO thin film is not significant, Ti tends to diffuse deeper into the sample during annealing. For Ti and N co-implanted single crystal, annealing induced diffusion causes more redistribution of the lighter N than Ti. In general, implanted dopants diffuse more easily in thin films compared to the single crystal due to the presence of grain boundaries in the latter. © 2010, Elsevier Ltd.en_AU
dc.identifier.citationLee, J., Metson, J., Evans, P. J., Pal, U., & Bhattacharyya, D. (2010). Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: a SIMS study. Applied Surface Science, 256(7), 2143-2146. doi:10.1016/j.apsusc.2009.09.064en_AU
dc.identifier.govdoc1562en_AU
dc.identifier.issn0169-4332en_AU
dc.identifier.issue7en_AU
dc.identifier.journaltitleApplied Surface Scienceen_AU
dc.identifier.pagination2143-2146en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2009.09.064en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/3213en_AU
dc.identifier.volume256en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectMonocrystalsen_AU
dc.subjectIon implantationen_AU
dc.subjectMass spectroscopyen_AU
dc.subjectIon microprobe analysisen_AU
dc.subjectDiffusionen_AU
dc.subjectThin filmsen_AU
dc.titleComparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: a SIMS studyen_AU
dc.typeJournal Articleen_AU
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