Please use this identifier to cite or link to this item:
Title: New modes of THz generation by low-temperature-grown GaAsSb.
Authors: Hargreaves, S
Bignell, LJ
Lewis, RA
Sigmund, J
Hartnagel, HL
Keywords: THz range
X-ray diffraction
Electric potential
Gallium arsenides
Infrared radiation
Issue Date: Feb-2009
Publisher: Elsevier
Citation: Hargreaves, S., Bignell, L. J., Lewis, R. A., Sigmund, J., & Hartnagel, H. L. (2009). New modes of THz generation by low-temperature-grown GaAsSb. Solid-State Electronics, 53(2), 160-165. doi:10.1016/j.sse.2008.10.015
Abstract: The low-temperature growth of GaAs1−ySby with y = 0.4 and 0.85 has been reported recently along with characterization by X-ray diffraction, Hall, and current–voltage measurements. Here we extend the characterization by employing reflectance spectroscopy in the range 5–18 THz to confirm the compositions of the grown layers. In the course of this work we established for the first time that GaAs1−ySby may serve as an emitter of THz radiation under optical excitation by ultrashort pulses of near-infrared radiation in two distinct experimental arrangements: THz is generated when an electrical bias is applied through a simple electrode structure, attributed to a photoconductive effect; and THz is generated by the pristine layers themselves, attributed to a surface-field effect. In each case the THz emission is compared directly with that from low-temperature-grown GaAs. The results presented here are for as-grown material. Suitable annealing may improve the THz emission even further. © 2009, Elsevier Ltd.
Gov't Doc #: 1590
ISSN: 0038-1101
Appears in Collections:Journal Articles

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.