Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/2303
Title: Elemental composition of reactively sputtered indium nitride thin films.
Authors: Sunil, K
Mo, L
Motlan
Tansley, TL
Keywords: Thin films
Indium nitrides
Sputtering
X-ray photoelectron spectroscopy
Rutherford backscattering spectroscopy
Oxygen
Issue Date: 15-Apr-1996
Publisher: The Japan Society of Applied Physics
Citation: Sunil, K., Mo, L., Motlan, & Tansley, T. L. (1996). Elemental composition of reactively sputtered indium nitride thin films. Japanese Journal of Applied Physics (JJAP), 35(4A), 2261-2265. doi:10.1143/JJAP.35.2261
Abstract: Indium nitride (InN) thin films have been grown on a variety of substrates using low-temperature radio frequency reactive sputtering of indium metal in pure nitrogen plasma. Quantitative compositional analyses of the films, carried out using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS), suggest that large amounts of oxygen are present in them. The high concentration of oxygen in our films is attributed to the voided microstructure as revealed by cross-sectional scanning electron microscopy. The XPS studies also suggest that the oxygen incorporated into the films is bonded to nitrogen. © 1996, The Japan Society of Applied Physics
Gov't Doc #: 2501
URI: http://dx.doi.org/10.1143/JJAP.35.2261
http://apo.ansto.gov.au/dspace/handle/10238/2303
ISSN: 0021-4922
Appears in Collections:Journal Articles

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