Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/151
Title: Neutralisation of point defects in Ge and GaAs by hydrogen incorporation.
Authors: Pearton, SJ
Keywords: Hydrogen
Gallium arsenides
Gamma radiation
Semiconductor materials
Issue Date: Oct-1981
Publisher: Australian Atomic Energy Commission
Citation: Pearton, S. J. (1981). Neutralisation of point defects in Ge and GaAs by hydrogen incorporation. Lucas Heights, NSW: Australian Atomic Energy Commission.
Abstract: Deep level transient spectroscopy has been used to observe the passivation of copper-related centres in Ge, y-radiation induced centres in Ge and residual defects in GaAs by reaction with atomic hydrogen. Data are presented on the efficiency of passivation as a function of the duration and temperature of the exposure to hydrogen. A 3-hour exposure in a H plasma at 300oC passivated >90% of the copper centres in Ge to a depth of ~80 μm; 3 hours at 250oC passivated 3 x 1015 donor defects cm-3 to a depth of ~1.1 μm in GaAs. An estimate of 3.5 x 10-9 cm2 s-1 at 300oC was obtained for the diffusion coefficient of H in Ge; at 225oC the corresponding number for GaAs is estimated to be ~3 x 10-13 cm2 s-1.
Gov't Doc #: 100
URI: http://apo.ansto.gov.au/dspace/handle/10238/151
ISBN: 0642597200
Appears in Collections:Scientific and Technical Reports

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