Neutralisation of point defects in Ge and GaAs by hydrogen incorporation.

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dc.contributor.authorPearton, SJen_AU
dc.date.accessioned2007-11-22T04:13:42Zen_AU
dc.date.accessioned2010-04-30T04:28:11Zen_AU
dc.date.available2007-11-22T04:13:42Zen_AU
dc.date.available2010-04-30T04:28:11Zen_AU
dc.date.issued1981-10en_AU
dc.description.abstractDeep level transient spectroscopy has been used to observe the passivation of copper-related centres in Ge, y-radiation induced centres in Ge and residual defects in GaAs by reaction with atomic hydrogen. Data are presented on the efficiency of passivation as a function of the duration and temperature of the exposure to hydrogen. A 3-hour exposure in a H plasma at 300oC passivated >90% of the copper centres in Ge to a depth of ~80 μm; 3 hours at 250oC passivated 3 x 1015 donor defects cm-3 to a depth of ~1.1 μm in GaAs. An estimate of 3.5 x 10-9 cm2 s-1 at 300oC was obtained for the diffusion coefficient of H in Ge; at 225oC the corresponding number for GaAs is estimated to be ~3 x 10-13 cm2 s-1.en_AU
dc.identifier.citationPearton, S. J. (1981). Neutralisation of point defects in Ge and GaAs by hydrogen incorporation. Lucas Heights, NSW: Australian Atomic Energy Commission.en_AU
dc.identifier.govdoc100en_AU
dc.identifier.isbn0642597200en_AU
dc.identifier.otherAAEC-E-521en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/151en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectHydrogenen_AU
dc.subjectGallium arsenidesen_AU
dc.subjectGamma radiationen_AU
dc.subjectSemiconductor materialsen_AU
dc.titleNeutralisation of point defects in Ge and GaAs by hydrogen incorporation.en_AU
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