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Please use this identifier to cite or link to this item: https://apo.ansto.gov.au/dspace/handle/10238/11704
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dc.contributor.authorRidgway, MC-
dc.contributor.authorAzevedo, GDM-
dc.contributor.authorElliman, RG-
dc.contributor.authorWesch, W-
dc.contributor.authorGlover, CJ-
dc.contributor.authorMiller, R-
dc.contributor.authorLlewellyn, DJ-
dc.contributor.authorForan, GJ-
dc.contributor.authorHansen, JL-
dc.contributor.authorNylandsted Larsen, A-
dc.date.accessioned2021-09-14T03:30:19Z-
dc.date.available2021-09-14T03:30:19Z-
dc.date.issued2004-09-05-
dc.identifier.citationRidgway, M. C., Azevedo, G. D. M., Elliman, R. G., Wesch, W., Glover, C. J., Miller, R., Llewellyn, D. J., Foran, G. J., Hansen, J. L.& Nylandsted Larsen, A. (2004). Preferential amorphisation of Ge nanocrystals in a silica matrix. In Averback, R. S., de la Rubia, T. D., Felter, T. E., Hamza, A. V. &. Rehn, L. E. (eds), Ion Beam Modification of Materials: Proceedings of the 14th International Conference on Ion Beam Modification of Materials, Pacific Grove, California, USA, 5-10 September 2004. In Special Issue of Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242(1-2), 121-124. doi:10.1016/j.nimb.2005.08.024en_US
dc.identifier.issn0168-583X-
dc.identifier.urihttps://doi.org/10.1016/j.nimb.2005.08.024en_US
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/11704-
dc.description.abstractExtended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface. © 2005 Elsevier B.Ven_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectCharged particlesen_US
dc.subjectCrystal defectsen_US
dc.subjectCrystal structuresen_US
dc.subjectNanocrystalsen_US
dc.subjectElectron microscopyen_US
dc.subjectLaser spectroscopyen_US
dc.subjectRaman spectroscopyen_US
dc.subjectMineralsen_US
dc.subjectOxide mineralsen_US
dc.subjectPoint defectsen_US
dc.titlePreferential amorphisation of Ge nanocrystals in a silica matrixen_US
dc.typeConference Paperen_US
dc.date.statistics2021-09-09-
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