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DC Field | Value | Language |
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dc.contributor.author | Ridgway, MC | - |
dc.contributor.author | Azevedo, GDM | - |
dc.contributor.author | Elliman, RG | - |
dc.contributor.author | Wesch, W | - |
dc.contributor.author | Glover, CJ | - |
dc.contributor.author | Miller, R | - |
dc.contributor.author | Llewellyn, DJ | - |
dc.contributor.author | Foran, GJ | - |
dc.contributor.author | Hansen, JL | - |
dc.contributor.author | Nylandsted Larsen, A | - |
dc.date.accessioned | 2021-09-14T03:30:19Z | - |
dc.date.available | 2021-09-14T03:30:19Z | - |
dc.date.issued | 2004-09-05 | - |
dc.identifier.citation | Ridgway, M. C., Azevedo, G. D. M., Elliman, R. G., Wesch, W., Glover, C. J., Miller, R., Llewellyn, D. J., Foran, G. J., Hansen, J. L.& Nylandsted Larsen, A. (2004). Preferential amorphisation of Ge nanocrystals in a silica matrix. In Averback, R. S., de la Rubia, T. D., Felter, T. E., Hamza, A. V. &. Rehn, L. E. (eds), Ion Beam Modification of Materials: Proceedings of the 14th International Conference on Ion Beam Modification of Materials, Pacific Grove, California, USA, 5-10 September 2004. In Special Issue of Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242(1-2), 121-124. doi:10.1016/j.nimb.2005.08.024 | en_US |
dc.identifier.issn | 0168-583X | - |
dc.identifier.uri | https://doi.org/10.1016/j.nimb.2005.08.024 | en_US |
dc.identifier.uri | https://apo.ansto.gov.au/dspace/handle/10238/11704 | - |
dc.description.abstract | Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface. © 2005 Elsevier B.V | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | Charged particles | en_US |
dc.subject | Crystal defects | en_US |
dc.subject | Crystal structures | en_US |
dc.subject | Nanocrystals | en_US |
dc.subject | Electron microscopy | en_US |
dc.subject | Laser spectroscopy | en_US |
dc.subject | Raman spectroscopy | en_US |
dc.subject | Minerals | en_US |
dc.subject | Oxide minerals | en_US |
dc.subject | Point defects | en_US |
dc.title | Preferential amorphisation of Ge nanocrystals in a silica matrix | en_US |
dc.type | Conference Paper | en_US |
dc.date.statistics | 2021-09-09 | - |
Appears in Collections: | Conference Publications |
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