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Title: Preferential amorphisation of Ge nanocrystals in a silica matrix
Authors: Ridgway, MC
Azevedo, GDM
Elliman, RG
Wesch, W
Glover, CJ
Miller, R
Llewellyn, DJ
Foran, GJ
Hansen, JL
Nylandsted Larsen, A
Keywords: Charged particles
Crystal defects
Crystal structures
Electron microscopy
Laser spectroscopy
Raman spectroscopy
Oxide minerals
Point defects
Issue Date: 5-Sep-2004
Publisher: Elsevier
Citation: Ridgway, M. C., Azevedo, G. D. M., Elliman, R. G., Wesch, W., Glover, C. J., Miller, R., Llewellyn, D. J., Foran, G. J., Hansen, J. L.& Nylandsted Larsen, A. (2004). Preferential amorphisation of Ge nanocrystals in a silica matrix. In Averback, R. S., de la Rubia, T. D., Felter, T. E., Hamza, A. V. &. Rehn, L. E. (eds), Ion Beam Modification of Materials: Proceedings of the 14th International Conference on Ion Beam Modification of Materials, Pacific Grove, California, USA, 5-10 September 2004. In Special Issue of Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242(1-2), 121-124. doi:10.1016/j.nimb.2005.08.024
Abstract: Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface. © 2005 Elsevier B.V
ISSN: 0168-583X
Appears in Collections:Conference Publications

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