SIMS investigation on the 3C-SiC on Si

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dc.contributor.authorHan, Jen_AU
dc.contributor.authorDimitrijev, Sen_AU
dc.contributor.authorKong, Fen_AU
dc.contributor.authorAtanacio, AJen_AU
dc.date.accessioned2020-12-16T22:13:03Zen_AU
dc.date.available2020-12-16T22:13:03Zen_AU
dc.date.issued2009-08-01en_AU
dc.date.statistics2020-12-10en_AU
dc.description.abstractIn this paper, the spectrometry (SIMS) measurements of oxygen concentration in 3C SiC epitaxial layers on Si were presented and analysed. The concentration of oxygen determined by SIMS was as high as 1019 to 1020 atom/cm3. Unlike silicon, oxygen can act as donor atoms in SiC with calculated ionization levels of 200 meV [1-2]. It is generally believed that the main contribution of dopant concentration in the unintentionally doped SiC film is related to background nitrogen. Because of the high ionisation level, oxygen is not electrically active at room temperature. By measuring the conductivity of the films at higher temperatures, we extracted three donor energy levels: EA1= 79 meV, EA2= 180 meV, and EA3= 350 meV. The activation energy of 180 meV could be associated with the calculated ionization level for oxygen. Further analysis of the conductivity measurements at elevated temperatures will be performed to determine the electrically active donor concentration that is associated with the activation energy of 180 meV. © 2009 David Publishing Companyen_AU
dc.identifier.citationHan, J., Dimitrijev, S., Kong, F., & Atanacio, A. (2009). SIMS investigation on the 3C-SiC on Si. Journal of Materials Science and Engineering, 3(8), 15-17. Retrieved from: https://www.davidpublisher.com/index.php/Home/Article/index?id=17795.htmlen_AU
dc.identifier.issn1934-8959en_AU
dc.identifier.issue8en_AU
dc.identifier.journaltitleJournal of Materials Science and Engineeringen_AU
dc.identifier.pagination15-17en_AU
dc.identifier.urihttps://www.davidpublisher.com/index.php/Home/Article/index?id=17795.htmlen_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/10118en_AU
dc.identifier.volume3en_AU
dc.language.isoenen_AU
dc.publisherDavid Publishing Companyen_AU
dc.subjectMass spectroscopyen_AU
dc.subjectOxygenen_AU
dc.subjectEpitaxyen_AU
dc.subjectIonizationen_AU
dc.subjectElectric conductivityen_AU
dc.subjectActivation energyen_AU
dc.subjectSilicon carbidesen_AU
dc.titleSIMS investigation on the 3C-SiC on Sien_AU
dc.typeJournal Articleen_AU
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