Determination of radiation hardness of silicon diodes

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dc.contributor.authorVittone, Een_AU
dc.contributor.authorLopez, JGen_AU
dc.contributor.authorJaksic, Men_AU
dc.contributor.authorRamos, MCJen_AU
dc.contributor.authorLohstroh, Aen_AU
dc.contributor.authorPastuovic, Zen_AU
dc.contributor.authorRath, Sen_AU
dc.contributor.authorSiegele, Ren_AU
dc.contributor.authorSkukan, Nen_AU
dc.contributor.authorVizkelethy, Gen_AU
dc.contributor.authorSimon, Aen_AU
dc.date.accessioned2025-11-13T05:09:21Zen_AU
dc.date.available2025-11-13T05:09:21Zen_AU
dc.date.issued2019-06-15en_AU
dc.date.statistics2025-07-23en_AU
dc.description.abstractIn this paper, we describe an experiment aimed to measure the physical observables, which can be used for the assessment of the radiation hardness of commercially available silicon photo diodes commonly used as nuclear detectors in particle accelerator laboratories. The experiment adopted the methodology developed during the International Atomic Energy Agency (IAEA) Coordinated Research Project (CRP No. F11016) “Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators”. This methodology is based on the selective irradiation of micrometer-sized regions with different fluences of MeV ions using an ion microbeam and on the measurement of the charge collection efficiency (CCE) degradation by Ion Beam Induced Charge (IBIC) microscopy performed in full depletion condition, using different probing ions. The IBIC results are analyzed through a theoretical approach based on the Shockley-Read-Hall model for the free carrier recombination in the presence of ion-induced deep traps. This interpretative model allows the evaluation of the material radiation hardness in terms of recombination parameters for both electrons and holes. The device under study in this experiment was a commercial p-i-n photodiode, which was initially characterized by i) standard electronic characterization techniques to determine its doping and ii) the Angle-Resolved IBIC to evaluate its effective entrance window. Nine regions of (100 × 100) µm 2 were irradiated with 11.25 MeV He ions up to a maximum fluence of 3·10 12 ions/cm 2 . The CCE degradation was measured by the IBIC technique using 11.25 MeV He and 1.4 MeV He as probing ions. The model presented here proved to be effective for fitting the experimental data. The fitting parameters correspond to the recombination coefficients, which are the key parameters for the characterization of the effects of radiation damage in semiconductors. © 2019 Elsevier B.V.en_AU
dc.identifier.citationVittone, E., Garcia Lopez, J., Jaksic, M., Jimenez Ramos, M. C., Lohstroh, A., Pastuovic, Z., Rath, S., Siegele, R., Skukan, N., Vizkelethy, G., & Simon, A. (2019). Determination of radiation hardness of silicon diodes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 449, 6-10. doi:10.1016/j.nimb.2019.04.032en_AU
dc.identifier.issn0168-583Xen_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atomsen_AU
dc.identifier.pagination6-10en_AU
dc.identifier.urihttps://doi.org/10.1016/j.nimb.2019.04.032en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/16688en_AU
dc.identifier.volume449en_AU
dc.languageEnglishen_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectRadiationsen_AU
dc.subjectSiliconen_AU
dc.subjectHeliumen_AU
dc.subjectMicroscopyen_AU
dc.subjectPhotodiodesen_AU
dc.subjectMeitneriumen_AU
dc.subjectHardnessen_AU
dc.subjectSilicon diodesen_AU
dc.subjectAcceleratorsen_AU
dc.subjectIon beamsen_AU
dc.subjectSemiconductor detectorsen_AU
dc.subjectMeV Rangeen_AU
dc.titleDetermination of radiation hardness of silicon diodesen_AU
dc.typeJournal Articleen_AU
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