Characterization of MOSFET sensors for dosimetry in alpha particle therapy

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dc.contributor.authorSu, FYen_AU
dc.contributor.authorBiasi, Gen_AU
dc.contributor.authorTran, LTen_AU
dc.contributor.authorPan, VAen_AU
dc.contributor.authorHill, Den_AU
dc.contributor.authorLielkajis, Men_AU
dc.contributor.authorCutajar, Den_AU
dc.contributor.authorPetasecca. Men_AU
dc.contributor.authorLerch, MLFen_AU
dc.contributor.authorPastuovic, Zen_AU
dc.contributor.authorPoder, Jen_AU
dc.contributor.authorJoseph, Ben_AU
dc.contributor.authorJackson, Men_AU
dc.contributor.authorAnatoly, RBen_AU
dc.date.accessioned2024-02-29T04:39:44Zen_AU
dc.date.available2024-02-29T04:39:44Zen_AU
dc.date.issued2021-11-24en_AU
dc.date.statistics2023-04-24en_AU
dc.description.abstractAlpha particle therapy, such as diffusing alpha-emitters radiation therapy (DaRT) and targeted alpha-particle therapy (TAT), exploits the short-range and high linear energy transfer (LET) of alpha particles to destroy cancer cells locally with minimal damage to surrounding healthy cells. Dosimetry for DaRT and TAT is challenging, as their radiation sources produce mixed radiation fields of α particles, β particles, and γ rays. There is currently no dosimeter for real-time in vivo dosimetry of DaRT or TAT. Metal-oxide-semiconductor field-effect transistors (MOSFETs) have features that are ideal for this scenario. Owing to their compactness, MOSFETs can fit into fine-gauge needle applicators, such as those used to carry the radioactive seeds into the tumour. This study characterized the response of MOSFETs designed at the Centre for Medical and Ra diation Physics, University of Wollongong. MOSFETs with three different gate oxide thicknesses (0.55 µm, 0.68 µm, and 1.0 µm) were irradiated with a 5.5 MeV mono-energetic helium ion beam (He2+) using SIRIUS 6MV accelerator tandem at the Australian Nuclear Science and Technology Organization (ANSTO) and an Americium-241 (241Am) source. The sensitivity and dose-response linearity were assessed by analysing the spatially resolved median energy maps of each device and their corresponding voltage shift values. The re sults showed that the response of the MOSFET detectors was linear with alpha dose up to 25.68 Gy. Also, it was found that a gate bias of between 15 V and 60 V would optimize the sensitivity of the detectors to alpha particles with energy of 5.5 MeV. © The Authors.en_AU
dc.identifier.citationSu, F.-Y., Biasi, G., Tran, L. T., Pan, V., Hill, D., Lielkajis, M., Cutajar, D., Petasecca, M., Lerch, M. L. F., Pastuovic, Z., Poder, J., Joseph, B., Jackson, M., & Anatoly, R. B. (2021). Characterization of MOSFET sensors for dosimetry in alpha particle therapy. Presentation to the ANSTO User Meeting, 24-26 November 2021, Online. Retrieved from: https://events01.synchrotron.org.au/event/146/contributions/4338/contribution.pdfen_AU
dc.identifier.conferenceenddate2021-11-26en_AU
dc.identifier.conferencenameANSTO User Meeting 2021en_AU
dc.identifier.conferenceplaceOnlineen_AU
dc.identifier.conferencestartdate2021-11-24en_AU
dc.identifier.urihttps://events01.synchrotron.org.au/event/146/contributions/4338/contribution.pdfen_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15498en_AU
dc.language.isoenen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.subjectDosimetryen_AU
dc.subjectTherapyen_AU
dc.subjectBeamsen_AU
dc.subjectANSTOen_AU
dc.subjectAustralian organizationsen_AU
dc.subjectAmericium 241en_AU
dc.subjectAcceleratorsen_AU
dc.subjectAlpha particlesen_AU
dc.titleCharacterization of MOSFET sensors for dosimetry in alpha particle therapyen_AU
dc.typeConference Presentationen_AU
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