Fabrication of sub-stoichiometric Ti2O3 for room temperature thermoelectric energy regeneration: tuning of structural and electronic properties via defects engineering

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dc.contributor.authorYang, Jen_AU
dc.contributor.authorLiu, Yen_AU
dc.contributor.authorYu, DHen_AU
dc.contributor.authorLi, Sen_AU
dc.date.accessioned2023-12-07T05:37:46Zen_AU
dc.date.available2023-12-07T05:37:46Zen_AU
dc.date.issued2018-11-19en_AU
dc.date.statistics2023-05-24en_AU
dc.description.abstractTitanium oxides has drawn extensive attention as functional electronic materials in the past few years, due to their unique layered structure and physical properties. Sub-stoichiometric titania are particularly interesting non-toxic materials for thermoelectric applications because of their high electrical conductivity with possible low phonon thermal conductivities originated from phonon scatterings at ordered defect planes. Hereby, layered sub-stoichiometric Ti2O3 material has been successfully fabricated by densifications of the ball-milled precursors with spark plasma sinterings. The experiments were performed on densified Ti2O3 samples with 0.5, 3 and 10 h ball-milling times to compare the changes in PDOS. The application of high-energy ball milling could significantly de crease the grain size in the SPS-densified bulk sample, and thus affect the phonon behaviours. The XRD results showed with the increasing of ball milling hours, the percentage of Ti3O5 increased while Ti2O3 is still the main phase. Measurements of phonon density-of-states (PDOS) were per formed with the PELICAN time-of-flight neutron spectrometer in the energy-gain mode at ANSTO, at 200, 300, 500 and 650 K, respectively. The overall shapes of the GDOS are very similar across the three samples, with three peaks located at around 20, 40, and 60 meV and matched well with the calculated PDOS of Ti2O3, indicating the dominate phase for three samples are still Ti2O3. With the temperature increasing, the peak intensity at around ~20 meV increased, however, the red-shifts and intensity decreases were observed at the 40 and 60 meV phonon DOS peaks (as indication of anharmonic effects). This suggested that the acoustic phonons response differently to temperature increase compared to optical phonons. The intensities at between 50 to 60 meV increases for the 10H spectrum, compared to the other two. This is probably because of the excitation of the phonon states in Ti3O5, as the increased Ti3O5 percentage in 10H sample. Our results suggested the measurement matched well with the theoretical study, which indicates the structural changes could have played significant roles in determining the phononic structure of sub-stoichiometric Ti2O3 based material. © The Authors.en_AU
dc.identifier.citationYang, J., Liu, Y., Yu, D., & Li, S. (2018). Fabrication of sub-stoichiometric Ti2O3 for room temperature thermoelectric energy regeneration: tuning of structural and electronic properties via defects engineering. Presentation to the ANBUG-AINSE Neutron Scattering Symposium, AANSS 2018, AINSE Conference Centre New Illawarra Road Lucas Heights NSW 2234, Australia, Monday 19 November 2018 - Wednesday 21 November 2018, (pp. 10). Retrieved from https://events01.synchrotron.org.au/event/84/book-of-abstracts.pdfen_AU
dc.identifier.conferenceenddate2018-11-21en_AU
dc.identifier.conferencenameANBUG-AINSE Neutron Scattering Symposium, AANSS 2018en_AU
dc.identifier.conferenceplaceLucas Heights, New South Walesen_AU
dc.identifier.conferencestartdate2018-11-19en_AU
dc.identifier.pagination10en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15267en_AU
dc.language.isoenen_AU
dc.publisherAustralian Institute of Nuclear Science and Engineering (AINSE)en_AU
dc.relation.urihttps://events01.synchrotron.org.au/event/84/book-of-abstracts.pdfen_AU
dc.subjectTitanium oxidesen_AU
dc.subjectPhononsen_AU
dc.subjectScatteringen_AU
dc.subjectNeutronsen_AU
dc.subjectSpectrometersen_AU
dc.subjectMaterialsen_AU
dc.titleFabrication of sub-stoichiometric Ti2O3 for room temperature thermoelectric energy regeneration: tuning of structural and electronic properties via defects engineeringen_AU
dc.typeConference Abstracten_AU
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