Low temperature of formation of nickel germanide on crystalline germanium

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dc.contributor.authorFlgahtani, Fen_AU
dc.contributor.authorBlackford, MGen_AU
dc.contributor.authorAlnassar, MSNen_AU
dc.contributor.authorReeves, GKen_AU
dc.contributor.authorLeech, PWen_AU
dc.contributor.authorPirogova, Een_AU
dc.date.accessioned2025-02-07T03:12:56Zen_AU
dc.date.available2025-02-07T03:12:56Zen_AU
dc.date.issued2014en_AU
dc.date.statistics2025-02-07en_AU
dc.description.abstractGermanides are conveniently formed by heating a metal layer on germanium and are suitable for forming low resistance ohmic contacts. Many metals form germanides this way and nickel germanide in the form of NiGe is advantageous for use in germanium semiconductor devices as it has a low resistivity comparable to that of NiSi which is a well known electrical contact material in silicon devices. Other forms of nickel germanide, other than NiGe, are not desirable as they have higher resistivities [1]. Thin films of NiGe conveniently form at the relatively low temperature of 300C in a matter of minutes and at lower temperatures over a longer time. Here we report on the heat treatment required to form NiGe on n and p-type germanium at low temperatures (300C and lower) and report on the temperature duration required for fully reacting Ni of different thicknesses to form NiGe. Ni was deposited on crystalline germanium and heat treatments undertaken on several samples for time durations at different temperatures of 5 minutes to 12 hour. © 2014 IEEEen_AU
dc.identifier.booktitle2014 29th International Conference on Microelectronics : proceedings : MIEL 2014 : Belgrade, Serbia, 12-14 May 2014en_AU
dc.identifier.citationAlgahtani, F., Blackford, M., Alnassar, M. S. N., Reeves, G. K., Leech, P., Pirogova, E., & Holland, A. S. (2014). Low temperature of formation of nickel germanide on crystalline germanium. Paper presented to the 29th International Conference on Microelectronics : MIEL 2014 : Belgrade, Serbia, 12-14 May 2014. In 2014 29th International Conference on Microelectronics : proceedings : MIEL 2014 : Belgrade, Serbia, 12-14 May 2014, (pp. 253-256). doi:10.1109/MIEL.2014.6842135.en_AU
dc.identifier.conferenceenddate2014-05-14en_AU
dc.identifier.conferencename2014 29th International Conference on Microelectronics Proceedings - MIEL 2014en_AU
dc.identifier.conferenceplaceBelgrade, Serbiaen_AU
dc.identifier.conferencestartdate2014-05-12en_AU
dc.identifier.isbn9781479952960en_AU
dc.identifier.isbn9781479952953en_AU
dc.identifier.pagination253-256en_AU
dc.identifier.placeofpublicationPiscataway, N.J.en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15969en_AU
dc.language.isoenen_AU
dc.publisherIEEEen_AU
dc.subjectTemperature rangeen_AU
dc.subjectLayersen_AU
dc.subjectGermanidesen_AU
dc.subjectMetalsen_AU
dc.subjectThin Filmsen_AU
dc.subjectHeat treatmentsen_AU
dc.titleLow temperature of formation of nickel germanide on crystalline germaniumen_AU
dc.typeConference Paperen_AU
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