Hydrogen measurements in SiNx: H/Si thin films by ERDA

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dc.contributor.authorIonescu, Men_AU
dc.contributor.authorRichards, Ben_AU
dc.contributor.authorMcIntosh, Ken_AU
dc.contributor.authorSiegele, Ren_AU
dc.contributor.authorStelcer, Een_AU
dc.contributor.authorCohen, DDen_AU
dc.contributor.authorChandra, Ten_AU
dc.date.accessioned2025-01-14T01:28:47Zen_AU
dc.date.available2025-01-14T01:28:47Zen_AU
dc.date.issued2007-01-01en_AU
dc.descriptionPhysical copy held by ANSTO Library at DDC: 620.11/15en_AU
dc.description.abstractThin SiN film deposited on Si by plasma enhanced chemical vapour deposition (PECVD) is used for surface passivation of Si. During the PECVD process Hydrogen is incorporated into the SiN film, and the passivation properties of the resulting SiNx:H layers play an important role in enhancing the energy conversion efficiency of solar cells. It is believed that the Hydrogen present in SiNx:H is responsible for this enhancement, and therefore its concentration in the passivating layer is an important parameter. The Hydrogen composition and its depth profile in thin SiNx:H films of 20nm to 200nm was measured by elastic recoil detection analysis (ERDA), using a 1.7MeV He+ ion beam of (1×2)mm2 , generated by a high stability 2MV Tandetron ion beam accelerator. Simultaneously, Rutherford backscattering (RBS) spectra were recorded for each sample. The results show that the Hydrogen concentration in the SiNx:H layers is dependent of the deposition conditions. Also, Hydrogen was found to be homogenously distributed across the SiNx:H layer thickness, and the SiN x:H/Si interfaces were well defined. © 2007 Trans Tech Publications Ltd.en_AU
dc.identifier.booktitleTHERMEC '2006, International Conference on Processing & Manufacturing of Advanced Materials, Abstracts, July 4-8, 2006, Fairmont Hotel, Vancouver, Canada.en_AU
dc.identifier.citationIonescu, M., Richards, B., McIntosh, K., Siegele, R., Stelcer, E., Cohen, D. D., & Chandra, T. (2007). Hydrogen Measurements in SiNx: H/Si Thin Films by ERDA. Paper presented at THERMEC '2006, International Conference on Processing & Manufacturing of Advanced Materials, Abstracts, July 4-8, 2006, Fairmont Hotel, Vancouver, Canada. In Materials Science Forum (Vols. 539–543, pp. 3551–3556). doi:10.4028/www.scientific.net/msf.539-543.3551en_AU
dc.identifier.conferenceenddate2006-07-08en_AU
dc.identifier.conferencenameTHERMEC '2006, International Conference on Processing & Manufacturing of Advanced Materials, Abstracts, July 4-8, 2006, Fairmont Hotel,en_AU
dc.identifier.conferenceplaceVancouver, Canadaen_AU
dc.identifier.conferencestartdate2006-07-04en_AU
dc.identifier.editorsT. Chandra. K. Tsuzaki, M. Militzer, & C. Ravindranen_AU
dc.identifier.isbn9780878494286en_AU
dc.identifier.isbn0878494286en_AU
dc.identifier.issn0255-5476en_AU
dc.identifier.issn1662-9752en_AU
dc.identifier.issuePart 4en_AU
dc.identifier.journaltitleMaterials Science Forumen_AU
dc.identifier.pagination3551-3556en_AU
dc.identifier.urihttps://doi.org/10.4028/0-87849-428-6.3551en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15940en_AU
dc.identifier.volume539-543en_AU
dc.language.isoenen_AU
dc.publisherTrans Tech Publications Ltd.en_AU
dc.subjectThin Filmsen_AU
dc.subjectChemical vapor depositionen_AU
dc.subjectSiliconen_AU
dc.subjectSolar cellsen_AU
dc.subjectAcceleratorsen_AU
dc.subjectRutherford Scatteringen_AU
dc.subjectHydrogenen_AU
dc.titleHydrogen measurements in SiNx: H/Si thin films by ERDAen_AU
dc.typeConference Paperen_AU
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