Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

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dc.contributor.authorPradeepkumar, Aen_AU
dc.contributor.authorCortie, DLen_AU
dc.contributor.authorSmyth, Een_AU
dc.contributor.authorLe Brun, APen_AU
dc.contributor.authorIacopi, Fen_AU
dc.date.accessioned2024-02-22T00:15:41Zen_AU
dc.date.available2024-02-22T00:15:41Zen_AU
dc.date.issued2024-01-19en_AU
dc.date.statistics2024-02-22en_AU
dc.description.abstractThe growth of graphene on silicon carbide on silicon offers a very attractive route towards novel wafer-scale photonic and electronic devices that are easy to fabricate and can be integrated in silicon manufacturing. Using a Ni/Cu catalyst for the epitaxial growth of graphene has been successful in the mitigation of the very defective nature of the underlying silicon carbide on silicon, leading to a consistent graphene coverage over large scales. A more detailed understanding of this growth mechanism is warranted in order to further optimise the catalyst composition, preferably via the use of operando characterization measurements. Here, we report in situ neutron reflectometry measurements of (Ni, Cu)/SiC films on silicon wafers, annealed from room temperature to 1100 °C, which initiates graphene formation at the buried (Ni, Cu)/SiC interface. Detailed modelling of the high temperature neutron reflectometry and corresponding scattering length density profiles yield insights into the distinct physical mechanisms within the different temperature regimes. The initially smooth solid metallic layers undergo intermixing and roughening transitions at relatively low temperatures below 500 °C, and then metal silicides begin to form above 600 °C from interfacial reactions with the SiC, releasing atomic carbon. At the highest temperature range of 600–1100 °C, the low neutron scattering length density at high temperature is consistent with a silicon-rich, liquid surface phase corresponding to molten nickel silicides and copper. This liquid catalyst layer promotes the liquid-phase epitaxial growth of a graphene layer by precipitating the excess carbon available at the SiC/metal interface. © The Authors - Open Access CC BY-NCen_AU
dc.description.sponsorshipThis research was partly supported by an AINSE Ltd. Early Career Researcher Grant (ECRG). This work was performed in part at the Australian Nuclear Science and Technology Organization. We thank ANSTO for providing neutron beamtime via proposal (14446). Spatz neutron beam operations are supported through the National Collaborative Research Infrastructure Strategy (NCRIS), an Australian Government initiative. We acknowledge Chris Baldwin and Michael Fenech for technical support at the Australian Centre for Neutron Scattering, ANSTO. AP and FI also acknowledge support by the ARC Centre of Excellence for Transformative Meta-Optical Systems (CE200100010).en_AU
dc.format.mediumElectronic-eCollectionen_AU
dc.identifier.citationPradeepkumar, A., Cortie, D., Smyth, E., Le Brun, A. P., & Iacopi, F. (2024). Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study. RSC Advances, 14(5), 3232-3240. doi:10.1039/D3RA08289Jen_AU
dc.identifier.issn2046-2069en_AU
dc.identifier.issue5en_AU
dc.identifier.journaltitleRSC Advancesen_AU
dc.identifier.pagination3232-3240en_AU
dc.identifier.urihttp://dx.doi.org/10.1039/d3ra08289jen_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15378en_AU
dc.identifier.volume14en_AU
dc.languageEnglishen_AU
dc.language.isoenen_AU
dc.publisherRoyal Society of Chemistryen_AU
dc.subjectGrapheneen_AU
dc.subjectReflectivityen_AU
dc.subjectSilicon carbidesen_AU
dc.subjectSiliconen_AU
dc.subjectEpitaxyen_AU
dc.subjectFilmsen_AU
dc.subjectAmbient temperatureen_AU
dc.subjectTemperature rangeen_AU
dc.subjectNickelen_AU
dc.subjectCopperen_AU
dc.titleEpitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando studyen_AU
dc.typeJournal Articleen_AU
dcterms.dateAccepted2024-01-13en_AU
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